| Part Number | 2SA1158 |
| Manufacturer | Toshiba |
| Title | SILICON PNP TRANSISTOR |
| Description | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1158 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Br... |
| Features |
. High Breakdwon Voltage : VceO=-80V . Low Noise Figure : NF=ldB(Typ.) , 10dB(Max.) . Excellent hpE Linearity :
hFE (0 • 1mA) /hFE (2mA) =0 . 90 (Typ . • Complementary to 2SC2868. Unit in mm 51MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Ba... |
| File Size | 96.15KB |
| Datasheet |
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2SA1150 : TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: mm • High hFE: hFE = 100~320 • Complementary to 2SC2710. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −35 V Collector-emitter voltage VCEO −30 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −160 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC JEITA ― ― temp.
2SA1153 : www.DataSheet4U.com .
2SA1156 : .