2SC382TM Datasheet PDF

2SC380 : SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD. 72 3ODVWLF(QFDSVXODWH 7UDQVLVWRUV 2SC380 TRANSISTOR (NPN) FEATURES z High Frequency Amplifier Applications TO – 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 35 30 4 50 300 416 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown .

2SC380 : ST 2SC380 NPN Silicon Epitaxial Planar Transistor High frequency amplifier application The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC -IE Ptot Tj TS G S P FORM A IS AVAILABLE Value 35 30 4 50 50 300 125 -55 to +125 Unit V V V mA mA mW OC OC РАДИОТЕХ Тел.: (495) 795-0805 Факс: (4.

2SC3802K : www.DataSheet4U.com This Material Copyrighted By Its Respective Manufacturer www.DataSheet4U.com This Material Copyrighted By Its Respective Manufacturer www.DataSheet4U.com This Material Copyrighted By Its Respective Manufacturer www.DataSheet4U.com This Material Copyrighted By Its Respective Manufacturer .

2SC3803 : TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3803 High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications 2SC3803 Unit: mm • High transition frequency: fT = 200 MHz (typ.) • Low collector output capacitance: Cob = 3.5 pF (typ.) • Complementary to 2SA1483 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Continuous base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg 60 45 5 200 50 500 1000 150 −55 to 150 V V V mA mA mW °C .

2SC3803 : SMD Type Transistors High Frequency Amplifier Applications 2SC3803 Features High Transition Frequency: fT = 200MHz(typ.) Low Collector Output Capacitance: Cob = 3.5pF(typ.) Complementary to 2SA1483 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on a ceramic substrate (250 mm x 0.8t) 2 Symbol VCBO VCEO VEBO IC IB PC PC * Tj Tstg Rating 60 45 5 200 50 500 1.0 150 -55 to +150 Unit V V V mA mA mW W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Co.

2SC3805 : TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3805 TV Horizontal Deflection Output Applications TV Chroma Output Applications 2SC3805 Unit: mm · High voltage: VCEO = 300 V · Low output capacitance: Cob = 3.0 pF (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 300 300 7 100 200 50 10 150 −55 to 150 Unit V V V mA mA W °C °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7B.

2SC3807 : www.DataSheet.co.kr Ordering number:EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers. Package Dimensions unit:mm 2043A [2SC3807] Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature S.

2SC3807 : RoHS 2SC3807 2SC3807 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-126C 1.25 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO unless otherwise specified) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance W Fall time Storage tim.

2SC3807 : TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.  / Features IC ,hFE ,VCE(sat),VEBO 。 Large current capacity, high DC current gain, Low collector-to-emitter saturation voltage High VEBO. / Applications 。 low frequency general-purpose amplifiers, drivers. / Equivalent Circuit / Pinning 12 3 PIN1：Emitter PIN 2：Collector PIN 3：Base / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 2SC3807 Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Peak Collector Current Collector Power Dissipati.

2SC3807 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC3807 TRANSISTOR (NPN) TO-126 FEATURES z Low frequency power amplifier z Large current capacity z High DC current gain z Low collector-to-emitter saturation voltage z High VEBO MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 15 V IC Collector Current -Continuous 2 A Pc Power dissipation 1.2 W TJ Junction Temperature Tstg Storage Temperature 150 -55-150 ℃ ℃ 1. EMITTER 2. COLLECOTR 3. BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Pa.

2SC3807 : 2SC3807(3DA3807) NPN /SILION NPN TRANSISTOR :。 Purpose: low frequency general-purpose amplifiers, drivers. : IC , hFE ,VCE(sat),VEBO 。 Features: Large current capacity, high DC current gain, Low collector-to-emitter saturation voltage High VEBO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC ICM PC PC(TC=25℃) Tj Tstg 30 25 15 2.0 4.0 1.2 15 150 -55～150 V V V A A W W ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE(1) hFE(2) fT Cob VCE(sat) VBE(sat) ton tstg tf IC=10μA IE=0 IC=1.0mA REB=∞ IE=10μA IC=0 VCB=20V IE=0 VEB=10V IC=0 VCE=5.0V IC=500mA VCE=5.0V IC=1.0A VCE=10V IC=50mA VCB=10V f=1.

2SC3807C : www.DataSheet4U.com Ordering number : ENA0439 2SC3807C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807C Applications • 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Low-frequency general-purpose amplifiers, drivers. Features • • • • • Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=1000 to 2000). Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). High VEBO (VEBO≥17V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction .

2SC3807MP : www.DataSheet4U.com Ordering number : ENA0629 2SC3807MP SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807MP Applications • 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Low-frequency general-purpose amplifiers, drivers. Features • • • • • Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=1000 to 2000). Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). High VEBO(VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction.

2SC3808 : Ordering number:EN2105A NPN Epitaxial Planar Silicon Transistor 2SC3808 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers. Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). Package Dimensions unit:mm 2043A [2SC3808] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction.

2SC3809 : DATA SHEET SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES • The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating PACKAGE DIMENSIONS (in millimeters) 5.0 MIN. 1.25 ± 0.1 5.0 MIN. 3.5 +0.3 -0.2 2 0.6 ± 0.1 current range. • Dual chips in one package can achieve high performance for differential amplifiers and current mode logic (CML) circuits. 3 4 5.0 MIN. 1 5 PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Thermal Resistance (junction to .

2SC380TM : 2SC380TM TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC380TM High Frequency Amplifier Applications Unit: mm · High power gain: Gpe = 29dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 35 30 4 50 -50 300 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Characteristics.

2SC380TM : 2SC380TM Elektronische Bauelemente 0.05A , 35V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 G H High Frequency Amplifier Applications J Emitter Collector Base D REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 CLASSIFICATION OF hFE Product-Rank Range Marking 2SC380TM-R 2SC380TM-O 2SC380TM-Y 40~80 R 70~140 O 120~240 Y E K A B C F Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage C.