| Part Number | 2SC395A |
| Manufacturer | Toshiba |
| Title | SILICON NPN TRANSISTOR |
| Description | : ) SILICON NPN EPITAXIAL PLANAR TYPE (INDUSTRIAL APPLICATIONS) 2SC395A ULTRA HIGH SPEED SWITCHING APPLICATIONS. COMPUTER, COUNTER APPLICATION... |
| Features |
• High Transition Frequency : f T=200MHz(Min f ) • Low Saturation Voltage : VCE ( sat )=0.25V(Max.) at I c=10mA, Ig=lmA • High Switching Speed : t stg^25ns(Typ. 00.45 ,02.54 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Cu... |
| File Size | 175.90KB |
| Datasheet |
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2SC3950 : Ordering number:EN2441A PNP/NPN Epitaxial Planar Silicon Transistor 2SC3950 High-Definition CRT Display Video Output Applications Applications · High-definition CRT display video output, wide-band amplifier. Features · High fT : fT=2.0GHz. · Large current capacity : IC=500mA. · Micaless type : TO-126 plastic package. Package Dimensions unit:mm 2042A [2SC3950] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions B : Base C : Colle.
2SC3951 : Ordering number:EN2435A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1536/2SC3951 High-Definition CRT Display Video Output Applications Applications · High definition CRT display video output, wide-band amplifier. Features · High fT : fT=600MHz. · High breakdown voltage : VCEO=70Vmin. · Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=1.9pF/NPN, 2.4pF/PNP. · Complementary PNP and NPN types. · Adoption of FBET process. · Micaless type. ( ) : 2SA1536 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipati.
2SC3952 : Ordering number:ENN2436C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1537/2SC3952 High-Definition CRT Display Video Output Applications Applications · High-definition CRT display video output, wide-band amplifier. Package Dimensions unit:mm 2042B Features · High fT : fT=700MHz. · High breakdown voltage : VCEO=70Vmin. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=3.1pF/NPN, 4.8pF/PNP. · Complementary PNP and NPN types. · Adoption of FBET process. · Micaless type. [2SA1537/2SC3952] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 0.7 ( ) : 2SA1537 Specifications 123 2.4 4.8 1.7 1 : Emitter 2 : Collector 3 : Base SANYO.
2SC3953 : Ordering number:ENN2437B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1538/2SC3953 High-Definition CRT Display Video Output Applications Applications · High-definition CRT display video output, wide-band amplifier. Package Dimensions unit:mm 2042B [2SA1538/2SC3953] 8.0 1.0 Features · High fT : fT=400MHz. · High breakdown voltage : VCEO=120Vmin. · Small reverse transfer capacitance and excellent HF response : Cre=1.7pF/NPN, 2.2pF/PNP. · Complementary PNP and NPN types. · Adoption of FBET process. · Micaless type : TO-126 plastic package. 1.4 4.0 1.0 3.3 3.0 1.6 0.8 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 ( ) : 2SA1538 4.8 Specifications Absolute Maximum Ratings at Ta .
2SC3954 : Ordering number:EN2438A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1539/2SC3954 High-Definition CRT Display Video Output Applications Applications · High-definition CRT display video output, wide-band amplifier. Features · High fT : fT=500MHz. · High breakdown voltage : VCEO=120Vmin. · Small reverse transfer capacitance and excellent HF response : Cre=2.7pF/NPN, 4.0pF/PNP. · Complementary PNP and NPN types. · Adoption of FBET process. · Micaless type : TO-126 plastic package. ( ) : 2SA1539 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Di.
2SC3955 : Ordering number:ENN2439B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1540/2SC3955 High-Definition CRT Display Video Output Applications Applications · High-definition CRT display video output, wide-band amplifier. Features · High gain-bandwidth product : fT=300MHz. · High breakdown voltage : VCEO=200Vmin. · Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.5pF/NPN, 1.8pF/ PNP. · Complementary PNP and NPN types. · Adoption of FBET process. · Micaless type : TO-126 plastic package. Package Dimensions unit:mm 2042B [2SA1540/2SC3955] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 0.7 ( ) : 2SA1540 Specifications 123 2.4 4.
2SC3956 : Ordering number:EN2440A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1541/2SC3956 High-Definition CRT Display Video Output Applications Applications · High-definition CRT display video output, wide-band amplifier. Features · High gain-bandwidth product : fT=300MHz. · High breakdown voltage : VCEO=200Vmin. · Small reverse transfer capacitance and excellent high frequency characteristics : Cre=2.2pF/NPN, 2.7pF/ PNP. · Complementary PNP and NPN types. · Adoption of FBET process. · Micaless type : TO-126 plastic package. ( ) : 2SA1541 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Cur.
2SC3957 : 2SC3957 Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline MPAK-4 2 1 3 1 4 3 1. Collector 2. Emitter 3. Base 4. NC 2 2SC3957 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C (peak) PC Tj Tstg Ratings 40 30 10 300 500 150 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol V(BR)CEO I CBO I EBO hFE1* 1.