| Part Number | 2SC1380A |
| Manufacturer | Toshiba |
| Title | SILICON NPN TRANSISTOR |
| Description | : 2SC1380 2SC1380A SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. LOW NOISE AUDIO AM... |
| Features |
• High Breakdown Voltage : V c -g =50v . High DC Current Gain : 1^=200^700 • Low Noise Figure : NF=2dB(Max. ) (2SC1380A) at Rg =10kn, f=100Hz MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Powe... |
| File Size | 31.65KB |
| Datasheet |
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2SC1380 : : 2SC1380 2SC1380A SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. LOW NOISE AUDIO AMPLIFIER APPLICATIONS. (2SC1380A) Unit in mm 5.8 MAX 04.95 MAX. FEATURES • High Breakdown Voltage : V c -g =50v . High DC Current Gain : 1^=200^700 • Low Noise Figure : NF=2dB(Max. ) (2SC1380A) at Rg =10kn, f=100Hz MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO V CEO V EBO lC h PC T J T stg RATING 55 50 5 100 20 200 150 -55M.50 UNIT V V V mA mA mW °C °C 1. EMITTE.