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2SC2348


Part Number 2SC2348
Manufacturer Toshiba
Title Silicon NPN Transistor
Description SILICON NPN PLANAR TYPE 2SC2348 TV VHF RF AMPLIFIER APPLICATIONS. FEATURES . High Gain : Gpe =24dB (Typ. ) (f=200MHz) • Low Noise : NF=2.3dB (Ty...
Features . High Gain : Gpe =24dB (Typ. ) (f=200MHz)
• Low Noise : NF=2.3dB (Typ. ) (f=200MHz)
• Excellent Forward AGC Characteristics. 5.1MAX . , Unit in mm i s Q45 r_ l-l 0.5 5 MAX. a*5 i )| z; 00 00 HS r-t MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage E...

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2SC2344 : Ordering number:ENN544G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1011/2SC2344 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Package Dimensions unit:mm 2010C [2SA1011/2SC2344] 10.2 3.6 5.1 4.5 1.3 2.7 18.0 5.6 1.2 0.8 14.0 15.1 6.3 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C w w w . D a t a S 2.55 2.55 Conditions 2.7 ( ) : 2SA1011 1 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO220AB Rat.

2SC2344 : ·Low Collector Saturation Voltage- : VCE(sat)= 0.3V(Typ.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Complement to Type 2SA1011 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, audio frequency power amplifiers, 100W output predriver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3.0 A PC Total Power Dissipation@ TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tst.

2SC2344 : ·With TO-220 package ·Complement to type 2SA1011 APPLICATIONS ·High voltage switching ·Audio frequency power amplifier; ·100W output predriver applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 180 160 6 1.5 3.0 25 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Pro.

2SC2344 : TO-220 NPN 。Silicon NPN transistor in a TO-220 Plastic Package.  / Features 2SA1011 。 Complementary pair with 2SA1011. / Applications ,,100W 。 High voltage switching, AF power amplifier, 100W output predriver applications. / Equivalent Circuit / Pinning 123 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range D 60~120 E 100~200 http://www.fsbrec.com 1/6 2SC2344 Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current – Continuous(Pulse) Collector Power Dissipation Junction Temp.

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