A1264

A1260 : The A1260 vertical Hall-effect sensor IC is an extremely temperature-stable and stress-resistant magnetic-sensing device ideal for harsh operating environments. The sensor is actuated by alternating north and south polarity magnetic fields in plane with the device’s branded face. Two package options, the SOT23W surface-mount and SIP through-hole, allow sensing in a variety of orientations with respect to the mounting position. Superior high-temperature performance up to 175°C junction temperature is made possible through dynamic offset cancellation, which reduces the residual offset voltage normally caused by device overmolding, temperature dependencies, and thermal stress. Each device inclu.

A1262 : ·With TO-220 package ·Complement to type 2SC3179 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Product Specification 2SA1262 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open emitter Open base Open collector TC=25 VALUE -60 -60 -6 -4 -1 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com Pr.

A1262 : The A1262 is a two channel, latching Hall-effect sensor IC that features both vertical and planar Hall elements. The vertical and planar Hall elements feature sensing axes that are orthogonal to one another and provide 90° of phase separation for ring magnets that is inherently independent of magnet pole spacing and air gap. The 2D architecture of the A1262 simplifies the design of motors and magnetic encoders by providing quadrature output signals in a very small footprint. The A1262 outputs allow the speed and direction of a rotating ring magnet to be determined. The A1262 is available in two sensing options that allow flexibility in end-system magnetic design. Both options feature a plana.

A1263 : : 3 SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SC3180 . Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VcEO v EBO ic IB ?C Ti T sta RATING -80 -80 -5 -6 -0.6 60 UNIT V V V A A W 150 °C -55-150 °c Unit in mm 3.2±o.2 15L9MAX.,, ^ mz 3 T n d -H 2.0 ±0. + 0.3 1.0-a2 5 \m 5u45±0.2, cSci +1 5.45±0.2 X s a 00 -ft .1 f 5--:i 1. BASE 2. COLLECTOR (HEAT SINK) a EM.

A1265 : : A SILICON PIMP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SC3182 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage Unit in mm 15.9MAX. 03.2x0:2 % eS MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO VcEO Vebo ic ?B PC Ti T ste RATING -140 -140 -5 -10 -1 100 150 -55~150 UNIT V V V A A W °C °C oT + Q30 J 1.0-0.2 5 \ 5.45±0.2 5.45±0.2 n-t X Cic5 s + 1 d m an) "--V-3M CO CO 1 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER TOSHIB.

A1265N : ·With TO-3P(I) package ·Complement to type 2SC3182 ·2SA1265 with short pin APPLICATIONS ·Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO www.DataSheet4U.com PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -140 -140 -5 -10 -1 100 150 -55~150 UNIT V V V A A W ℃ ℃ VEBO IC IB B PT Tj Tstg Inchange Semiconductor Product Specification Silicon PNP.

A1266 : www.DataSheet4U.com .

A1266 : The A1266 integrated circuit is an ultrasensitive Hall-effect switch with 3D omnipolar magnetic actuation. The single silicon chip includes: three Hall plates, multiplexer, smallsignal amplifier, chopper stabilization, Schmitt trigger, and NMOS output transistors. The device outputs turn on when a magnetic field of sufficient strength is applied to the sensor in any orientation. Removal of the magnetic field will turn the output off. Two versions of the A1266 offer a choice of output format: separate X, Y, and Z outputs, or a combined X+Y+Z output. The low operating supply voltage, 2.5 to 5.5 V, and unique clocking algorithm assist in reducing the average power consumption, making it ideal f.

A1267 : www.DataSheet4U.com SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. 2SA1267 PNP EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA LOW FREQUENCY AMPLIFIER Package: TO-92S * Complement to 2SC3199 * Collector-Emitter Voltage VCEO=-50V ABSOLUTE MAXIMUM RATINGS at Tamb=250C Characteristic Symbol Rating Collector-Base Voltage Vcbo -50 Collector-Emitter Voltage Vceo -50 Emitter-Base Voltage Vebo -5 Collector Current Ic -150 Collector Dissipation Pc 450 Junction Temperature Tj 150 Storage Temperature Tstg -55~150 Unit V V V mA mW 0 0 PIN: 1 STYLE 2 3 C C NO.1 E C B ELECTRICAL CHARACTERISTICS at Tamb=250C Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Volta.

A1268 : www.DataSheet4U.com www.DataSheet4U.com .