2SB754

2SB753 : SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) o 2SB753 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES: High Collector Current : Iq=-7A Low Collector Saturation Voltage : VcE(sat)=-0.5V(Max.) at I C =-4A High Collector Power Dissipation. Complementary to 2SD843. INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL 'CBO 'CEO 'EBO RATING -100 -80 -5 UNIT Collector Current ic -7 1. BASE Collector Power Dissipation Ta=25°C Tc=25°C PC 1.5 40 2. COLLECTOR (HEAT SINK) 3. EMITTER Junction Temperature Ti 150 JEDEC EIAJ Storage Temperature Range stg -55^.

2SB753 : ·With TO-220C package ·Complement to type 2SD843 ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -80 -5 -7 1.5 W UNIT V V V A SavantIC Semiconductor www.DataSheet4U.c.

2SB753 : ·High Collector Current:IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -4A ·High Collector Power Dissipation ·Complement to Type 2SD843 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -7 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -5.

2SB754 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·High Collector Current: IC= -7A ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max) @IC= -4A ·Complement to Type 2SD844 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ 2.5 W 60 TJ Junction Temperature 150 ℃ Tstg.

2SB754 : ·With TO-3P(I) package ·Complement to type 2SD844 ·High collector current :IC=-7A ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IE PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 60 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -50 -50 -5 -7 7 2.5 W UNIT V V V A A SavantIC Semiconductor w.

2SB755 : 2SB755 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage VCEO=-150V (Min.) High Transition Frequency : f T=20MHz (Typ.) Complementary to 2SD845. Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation „ I (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO RATING -150 v EBO IC -5 -12 IE 12 PC 120 Ti 150 Tstg -55^,150 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER JEDEC EIAJ TOSHIBA 2 — 34 A 1A Weigh.

2SB755 : ·With MT-200 package ·Complement to type 2SD845 ·High transition frequency ·High breakdown voltage :VCEO=-150V(min) APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -12 -1.2 120 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.Da.

2SB755 : ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SD845 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.2 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB755 isc website：www.iscsemi.com 1 isc & iscsemi is r.

2SB757 : ·With TO-3PN package ·High collector current ·Wide area of safe operation ·Complement to type 2SD847 APPLICATIONS ·Audio amplifications ·Serie regulators ·General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS (Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -40 -40 -5 -15 -5 80 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTI.

2SB757 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD847 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio amplifier applications ·Series regulators ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -40 V -5 V IC Collector Current-Continuous IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A -5 A 80 W 150 ℃ Tstg Storag.