2SC2073

2SC2073 : ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA940 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2S.

2SC2073 : The UTC 2SC2073 is an NPN silicon power transistors, it uses UTC’s advanced technology to provide customers with high collector base voltage, etc. The UTC 2SC2073 is suitable for general purpose Power amplifier, vertical output application.  FEATURES * High collector base voltage  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC2073L- TA3-T 2SC2073G-TA3-T TO-220 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE Packing Tube  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R221-021.a 2SC2073 Preliminary NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RAT.

2SC2073 : TO-220 NPN 。Silicon NPN transistor in a TO-220 Plastic Package.  / Features , 2SA940 。 Wide Safe Operating Area, complementary to 2SA940.  / Applications 。 Power amplifier applications, vertical output applications. / Equivalent Circuit / Pinning 12 3 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 2SC2073 Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCE.

2SC2073 : ·With TO-220 package ·Complement to type 2SA940 APPLICATIONS ·Power amplifier applications ·Vertical output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 VALUE 150 150 5 1.5 0.5 1.5 25 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified S.

2SC2073 : Features 3 2 1 — Wide safe Operating Area. — Complementary to 2SA940 1. BASE 2. COLLECTOR 3. EMITTER 2SC2073(NPN) TO-220 Transistor TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Paramenter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Dimensions in inches and (millimeters) Value Units 150 V 150 V 5V 1.5 A 1.5 W 150 -55-150 ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector.

2SC2073 : MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Halogen free available upon request by adding suffix "-HF" • Wide safe Operating Area. • Complementary to 2SA940 • Moisure Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating Maximum Ratings Symbol VCEO VCBO VEBO IC PC Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Rating 150 150 5.0 1.5 1.5 Unit V V V A W TJ Junction Temperature -55.

2SC2073 : Production specification NPN Triple Didduesd Planar Silicon Transistor 2SC2073 FEATURES z High Breakdown Voltage(VCBO≥900V). z Fast Switching Speed. z Wide ASO. Pb Lead-free TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 900 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Pulse Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ Tc=25℃ 800 V 7V 1.5 A 5 0.8 A 2 W 40 -55 to +150 ℃ X033 Rev.A www.gmicroelec.com 1 Production specification NPN Triple Didduesd Planar Silicon Transistor 2SC2073 ELECT.

2SC2073 : 2SC2073 ® 2SC2073 Pb Pb Free Plating Product NPN Silicon Epitaxial Power Transistor FEATURES z Complements the 2SA940. z Wide Safe Operationg Area. z Fast Switching Speed. z Wide ASO. 6.50±0.20 9.90±0.20 φ3.60±0.20 4.50±0.20 1.30±0.20 15.70±0.20 2.80±0.20 9.19±0.20 COLLECTOR 2 BASE 1 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 3.02±0.20 13.08±0.20 1.27±0.20 1.52±0.20 2.40±0.20 1 23 TO-220C 2.54typ 2.54typ Package Dimension 0.80±0.20 0.50±0.20 Dimensions in Millimeters MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 150 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Em.

2SC2073A : 2SC2073A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2073A Power Amplifier Applications Vertical Output Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 5 V Collector current IC 1.5 A Base current IB 0.5 A Collector power dissipation Junction temperature Ta = 25°C Tc = 25°C PC Tj 2.0 W 25 150 °C 1.Base 2.Collector 3.Emitter Storage temperature range Tstg −55 to 150 °C JEDEC ― Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant chan.

2SC2073A : TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features , 2SA940A 。 Wide Safe Operating Area, complementary to 2SA940A.  / Applications 。 Power amplifier applications, vertical output applications. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。 See Marking Instructions. http://www.fsbrec.com 1/6 2SC2073A Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Current Collector Power Dissipation Collector Power Dissipation Junction Temperature Storage Temperature .

2SC2075 : ·High transition frequency ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·27MHz Power Amplifier Applications ·Recommended for output stage application of AM 4W transmitter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE=150Ω 80 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 4 A IE Emitter current Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2075 isc website：www.iscsemi.cn 1 isc & iscsemi is registered .

2SC2075 : : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) I i 2SC2075 27MHz POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES • Recommended for Output Stage Applicat ion of AM 4W Transmitter. • High Power Gain. / 10.3MAX. 03.6±O.2 *1 h r XJ Sfiit *' ! 3 to CO in • Wide Area of Safe Operation. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage RBE=50^ Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VCER vEBO ic IE PC Tj Tstg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current Breakdown Collector-Emitter Voltage E.

2SC2075 : ·With TO-220 package ·High transition frequency ·Wide area of safe operation APPLICATIONS ·27MHz power amplifier applications ·Recommended for output stage application of AM 4W transmitter PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 80 4 4 -4 10 150 -55~150 UNIT V V V A A W SavantIC Semiconductor.

2SC2076 : www.DataSheet4U.com .

2SC2078 : Ordering number:EN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit:mm 2010C [2SC2078] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCER VEBO IC ICP PC Tc=50˚C RBE=150Ω www.DataSheet.net/ JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Conditions Ratings 80 75 5 3 5 1.2 10 150 –55 to +150 Unit V V V A A W W ˚C ˚C Tj Tstg Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Cu.

2SC2078 : With TO-220 package ·Low collector saturation voltage APPLICATIONS ·27MHz RF power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 80 75 5 3 5 1.2 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwi.