FFSH5065B-F085 Datasheet

FFSH5065B-F085 SiC Schottky Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

Features

• Max Junction Temperature 175°C
• Avalanche Rated 225 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters DATA SHEET www.onsemi.com TO−247−2LD CASE 340DA 1. Cathode 2. Anode Schottky Diode MARKING DIAGRAM AYWWKK FFSH 5065B A YWW KK FFSH5065B = Assembly Plant Code = Date Code (Year & Week) = Lot Traceability Co.