SILICON NPN TRIPLE DIFFUSED TYPE 2SD880 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES : . High DC Current Gain : hEE =300(Max. )(VCE =5V, Ic=0.5A) . Low Saturation Voltage : VCE ( sat )=1.0V(Max.)(IC=3A, Ifi=0.3A) . High Power Dissipation : PC =30W (Tc=25°C) ; Complementary to 2SB834. Un.
: . High DC Current Gain : hEE =300(Max. )(VCE =5V, Ic=0.5A) . Low Saturation Voltage : VCE ( sat )=1.0V(Max.)(IC=3A, Ifi=0.3A) . High Power Dissipation : PC =30W (Tc=25°C) ; Complementary to 2SB834. Unit in mm 10.3MAX. 03.6iO2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CBO 60 Collector-Emitter Voltage Emitter-Base Voltage v CEO 60 v EBO Collector Current ic Base Current 0.5 Collector Power Ta=25°C 1.5 Dissipation Tc=25°C 30 Junction Temperature 150 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER TO-220AB Storage Temperature Range .
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | 2SD880 |
GME |
NPN Epitaxial Silicon Transistor | |
2 | 2SD880 |
UTC |
NPN Transistor | |
3 | 2SD880 |
INCHANGE |
NPN Transistor | |
4 | 2SD880 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SD880 |
Weitron |
NPN Silicon Epitaxial Power Transistor | |
6 | 2SD880 |
TGS |
Transistor | |
7 | 2SD880-GR |
MCC |
NPN Silicon Power Transistors | |
8 | 2SD880-Q |
MCC |
NPN Silicon Power Transistors | |
9 | 2SD880-Y |
MCC |
NPN Silicon Power Transistors | |
10 | 2SD880G |
UTC |
NPN Transistor | |
11 | 2SD880Y |
USHA |
SILICON PLASTIC POWER TRANSISTOR | |
12 | 2SD882 |
NEC |
NPN Silicon Power Transistor | |
13 | 2SD882 |
INCHANGE |
NPN Transistor | |
14 | 2SD882 |
ST Microelectronics |
NPN MEDIUM POWER TRANSISTOR | |
15 | 2SD882 |
UTC |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |