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2SD880

GME
Part Number 2SD880
Manufacturer GME
Description NPN Epitaxial Silicon Transistor
Published Apr 4, 2018
Detailed Description NPN Epitaxial Silicon Transistor FEATURES  Low frequency power amplifier.  Complememt to 2SB834. Pb Lead-free Produ...
Datasheet PDF File 2SD880 PDF File

2SD880
2SD880

Overview
NPN Epitaxial Silicon Transistor FEATURES  Low frequency power amplifier.
 Complememt to 2SB834.
Pb Lead-free Production specification 2SD880 TO-220AB TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature Continuous 60 V 7V 3A 1.
5 W -55 to +150 ℃ X082 Rev.
A www.
gmesemi.
com 1 Production specification NPN Epitaxial Silicon Transistor 2SD880 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base Breakdown Voltage V(BR)CBO IC=100μA,IE=0 60 - - V Collector-emitter Breakdown Voltage V(BR)CEO IC=50mA,IB=0 60 - - V Emitter-base Breakdown Voltage V(BR)EBO IE=100μA,IC=0 7 - - V Collector Cut-off Current ICBO VCB...


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