MDP08N055TH |
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Part Number | MDP08N055TH |
Manufacturer | MagnaChip |
Description | The MDP08N055TH, Magnachip’s latest generation of MV MOSFET Technology, which provides high performance in the lowest Rds(on), fast switching performance, and excellent quality. These devices can also... |
Features |
VDS = 80V ID = 120 A @VGS = 10V Very low on-resistance RDS(ON)
< 5.5 mΩ @VGS = 10V 175 oC operating temperature 100% UIL Tested 100% Rg Tested 100% △VDS Tested
D
G DS
TO-220
Absolute Maximum Ratings (TJ = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1) Pulsed Drain Current (2) Power Dissipation Single Pulse Avalanche Energy (3)
TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC
TC=25oC TC=100oC TA=25oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Re... |
Datasheet |
![]() PDF 1.09MB |
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