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MDP10N055TH

MagnaChip
Part Number MDP10N055TH
Manufacturer MagnaChip
Description N-Channel MOSFET
Published Jan 11, 2022
Detailed Description MDP10N055TH– Single N-Channel Trench MOSFET 100V MDP10N055TH Single N-channel Trench MOSFET 100V, 120A, 5.5mΩ General ...
Datasheet PDF File MDP10N055TH PDF File

MDP10N055TH
MDP10N055TH

Overview
MDP10N055TH– Single N-Channel Trench MOSFET 100V MDP10N055TH Single N-channel Trench MOSFET 100V, 120A, 5.
5mΩ General Description Features The MDP10N055TH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality.
These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications.
 VDS = 100V  ID = 120A @VGS = 10V  Very low on-resistance RDS(ON) < 5.
5 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested  175 oC operating temperature D GDS TO-220 Absolute Maximum Ratings (TJ = 25 oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) Power Dissipation Single Pulse Avalanche Energy (3) TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jul.
2021.
Version 1.
7 1 G S Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating Unit 100 V ±20 V 130 120 A 92 480 188 W 93 288 mJ -55~175 oC Symbol RθJA RθJC Rating 62.
5 0.
8 Unit oC/W Magnachip Semiconductor Ltd.
MDP10N055TH– Single N-Channel Trench MOSFET 100V Ordering Information Part Number MDP10N055TH Temp.
Range -55~175oC Package TO-220 Packing Tube RoHS Status Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Delay Time td(o...


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