DatasheetsPDF.com

BAS4

General Semiconductor
Part Number BAS4
Manufacturer General Semiconductor
Description Schottky Diodes
Published Mar 26, 2005
Detailed Description BAS40 THRU BAS40-06 Schottky Diodes SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ These diodes feature very low ...
Datasheet PDF File BAS4 PDF File

BAS4
BAS4

Overview
BAS40 THRU BAS40-06 Schottky Diodes SOT-23 .
122 (3.
1) .
118 (3.
0) .
016 (0.
4) 3 FEATURES ♦ These diodes feature very low turn-on Top View .
056 (1.
43) .
052 (1.
33) voltage and fast switching.
♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
1 2 max.
.
004 (0.
1) .
007 (0.
175) .
005 (0.
125) .
037(0.
95) .
037(0.
95) .
045 (1.
15) .
037 (0.
95) .
016 (0.
4) .
016 (0.
4) .
102 (2.
6) .
094 (2.
4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx.
0.
008 g Dimensions in inches and (millimeters) 3 3 Top View 1 2 1 2 BAS40 Marking: 43 3 BAS40-04 Marking: 44 3 Top View 1 2 1 2 BAS40-05 Marking: 45 BAS40-06 Marking: 46 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE Ratings at 25 °C ambient temperature unless otherwise specified Symbol Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25 °C Surge Forward Current at tp < 1 s, Tamb = 25 °C Power Dissipation1) at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 40 2001) 6001) 2001) 150 –55 to +150 Unit V mA mA mW °C °C VRRM IF IFSM Ptot Tj TS Device on fiberglass substrate, see layout 4/98 BAS40 THRU BAS40-06 ELECTRICAL CHARACTERISTICS Ratings for one diode at 25 °C ambient temperature unless otherwise specified Symbol Reverse Breakdown Voltage Tested with 10 µA Pulses Leakage Current Pulse Test tp < 300 µs at VR = 30 V Forward Voltage Pulse Test tp < 300 µs at IF = 1 mA at IF = 40 mA Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA Thermal Resistance Junction to Ambient Air 1) Min.
40 – Typ.
– 20 Max.
– 100 Unit V nA V(BR)R IR VF VF Ctot trr RthJA – – – – – – – 4.
0 – – 380 1000 5 5 4301) mV mV pF ns K/W Device on fiberglass substrate, see layout .
30 (7.
5) .
12 (3) .
04 (1) .
08 (2) .
04 (1) .
08 (2) .
59 (15) .
47 (12) .
03 (0.
8) 0.
2 (5) .
06 (1.
5) .
20 (5.
1) Dimensions in inches (millimeters) Layout for RthJA test Thickness: F...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)