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BAS4

NXP
Part Number BAS4
Manufacturer NXP
Description Low-leakage diode
Published Mar 26, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BAS45AL Low-leakage diode Product specification Supersedes da...
Datasheet PDF File BAS4 PDF File

BAS4
BAS4

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BAS45AL Low-leakage diode Product specification Supersedes data of 1999 May 04 1999 May 28 Philips Semiconductors Product specification Low-leakage diode FEATURES • Continuous reverse voltage: max.
125 V • Repetitive peak forward current: max.
625 mA • Low reverse current: max.
1 nA • Switching time: typ.
1.
5 µs.
APPLICATION • Low leakage current applications.
handbook, 4 columns BAS45AL DESCRIPTION Epitaxial medium-speed switching diode with a low leakage current in a small SOD80C glass SMD package.
k a MAM061 Fig.
1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.
4 tp = 1 µs tp = 1 ms tp = 1 s Ptot Tstg Tj Note 1.
Device mounted on a FR4 printed-circuit board.
total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.
5 400 +175 175 A A A mW °C °C note 1; see Fig.
2 CONDITIONS − − − − MIN.
MAX.
125 125 250 625 UNIT V V mA mA 1999 May 28 2 Philips Semiconductors Product specification Low-leakage diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL VF PARAMETER forward voltage see Fig.
3 IF = 1 mA IF = 10 mA IF = 100 mA IR reverse current see Fig.
5 VR = 125 V; Emax = 100 lx VR = 30 V; Tj = 125 °C; Emax = 100 lx VR = 125 V; Tj = 125 °C; Emax = 100 lx VR = 125 V; Tj = 150 °C; Emax = 100 lx Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.
6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.
7 − − − − − 1.
5 1 − − − CONDITIONS TYP.
BAS45AL MAX.
780 860 1000 UNIT mV mV mV nA nA nA µA pF µs 300 500 2 4 − THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1.
Dev...


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