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BAT54S

General Semiconductor
Part Number BAT54S
Manufacturer General Semiconductor
Description Schottky Diodes
Published Mar 26, 2005
Detailed Description BAT54 THRU BAT54S Schottky Diodes SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ These diodes feature very low tu...
Datasheet PDF File BAT54S PDF File

BAT54S
BAT54S

Overview
BAT54 THRU BAT54S Schottky Diodes SOT-23 .
122 (3.
1) .
118 (3.
0) .
016 (0.
4) 3 FEATURES ♦ These diodes feature very low turn-on Top View .
056 (1.
43) .
052 (1.
33) voltage and fast switching.
♦ These devices are protected by a PN 1 2 max.
.
004 (0.
1) junction guard ring against excessive voltage, such as electrostatic discharges.
.
007 (0.
175) .
005 (0.
125) .
037(0.
95) .
037(0.
95) .
045 (1.
15) .
037 (0.
95) .
016 (0.
4) .
016 (0.
4) .
102 (2.
6) .
094 (2.
4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx.
0.
008 g Dimensions in inches and (millimeters) 3 3 Top View 1 2 1 2 BAT54 Marking: L4 3 BAT54A Marking: L42 3 Top View 1 2 1 2 BAT54C Marking: L43 BAT54S Marking: L44 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE Ratings at 25 °C ambient temperature unless otherwise specified Symbol Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25 °C Repetitive Peak Forward Current at Tamb = 25 °C Surge Forward Current at tp < 1 s, Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 30 2001) 3001) 6001) 150 –65 to +150 Unit V mA mA mA °C °C VRRM IF IFRM IFSM Tj TS Device on fiberglass substrate, see layout.
4/98 BAT54 THRU BAT54S ELECTRICAL CHARACTERISTICS Ratings for one diode at 25 °C ambient temperature unless otherwise specified Symbol Reverse Breakdown Voltage tested with 100 µA Pulses Forward Voltage Pulse Test tp < 300 µs, δ < 2% at IF = 0.
1 mA at IF = 1 mA at IF = 10 mA at IF = 30 mA at IF = 100 mA Leakage Current Pulse Test tp < 300 µs, δ < 2% at VR = 25 V Capacitance at VF = 1 V, f = 1 MHz Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA, RL = 100 Ω Thermal Resistance Junction to Ambient Air 1) Min.
30 Typ.
– Max.
– Unit V V(BR)R VF VF VF VF VF IR – – – – – – – – – – – – 240 320 400 500 1000 2 mV mV mV mV mV µA Ctot trr – – – – 10 5 pF ns RthJA – – 4301) K/W Device on fiberglass substrate, see layout .
30 (7.
5) .
12 (3) .
04 (1) .
08 (2) .
04 (1) .
08 (2) .
59...


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