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BAT54SW

STMicroelectronics
Part Number BAT54SW
Manufacturer STMicroelectronics
Description SMALL SIGNAL SCHOTTKY DIODE
Published Mar 26, 2005
Detailed Description ® BAT54J / W / AW / CW / SW SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE ...
Datasheet PDF File BAT54SW PDF File

BAT54SW
BAT54SW

Overview
® BAT54J / W / AW / CW / SW SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE K NC A NC K A K2 K1 A K2 A K1 BAT54W DESCRIPTION Schottky barrier diodes encapsulated either in SOT-323 or SOD-323 small SMD packages.
Single and double diodes with different pining are available.
K A2 A1 A1 K A2 A2 K1 BAT54AW K2 K2 A1 A2 K1 A1 BAT54CW SOT-323 BAT54SW A 86 K BAT54J SOD-323 ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFSM Ptot Tstg Tj TL Continuous forward current Surge non repetitive forward current Power dissipation (note 1) Tamb = 25°C Maximum storage temperature range Maximum operating junction temperature * Maximum temperaturefor soldering during 10s tp=10ms sinusoidal SOD-323 SOT-323 - 65 to +150 150 260 °C °C °C Parameter Repetitive peak reverse voltage Value 30 0.
3 1 230 Unit V A A mW Note 1: for double diodes, Ptot is the total dissipation of both diodes * : dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth(j−a) 1/5 June 1999 - Ed: 2A BAT54J / W / AW / CW / SW THERMAL RESISTANCE Symbol Rth (j-a) Junction to ambient (*) Parameters SOD-323 SOT-323 (*) Mounted on epoxy board, with recommended pad layout.
STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * Parameters Forward voltage drop Tests conditions Tj = 25°C IF = 0.
1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR ** Reverse leakage current Tj = 25°C Tj = 100°C Pulse test : * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% Value 550 Unit °C/W °C/W Min.
Typ.
Max.
240 320 400 500 900 1 100 Unit mV VR = 30 V µA DYNAMIC CHARACTERISTICS (Tj = 25 °C) Symbol C trr Parameters Junction capacitance Reverse recovery time Tests conditions Tj = 25°C VR = 1 V F = 1 MHz Min.
Typ.
Max.
10 5 Unit pF ns IF = 10 mA IR = 10 mA Tj = 25°C Irr = 1 mA RL = 100 Ω Fig.
1-1: Forward voltage drop versus forward current (typical values, low level).
IFM(A) 2.
00E-2 1.
80E-2 Tj=1...


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