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BAV70S

Infineon Technologies AG
Part Number BAV70S
Manufacturer Infineon Technologies AG
Description Silicon Switching Diode
Published Mar 26, 2005
Detailed Description Silicon Switching Diode • For high-speed switching applications • Common cathode configuration • BAV70S / U: For orienta...
Datasheet PDF File BAV70S PDF File

BAV70S
BAV70S

Overview
Silicon Switching Diode • For high-speed switching applications • Common cathode configuration • BAV70S / U: For orientation in reel see package information below • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BAV70.
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BAV70 BAV70W ! , ,  BAV70S BAV70U $# " , ,  ,! ," ! Type BAV70 BAV70S BAV70U BAV70W Package SOT23 SOT363 SC74 SOT323 Configuration common cathode double common cathode double common cathode common cathode 1Pb-containing package may be available upon special request Marking A4s A4s A4s A4s 1 2007-09-19 BAV70.
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Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs VR VRM IF IFSM t = 1 ms t = 1 s single t = 1 s double Value 80 85 200 4.
5 1 0.
5 0.
75 Total power dissipation BAV70, TS ≤ 33°C BAV70S, TS ≤ 85°C BAV70U, TS ≤ 90°C BAV70W, TS ≤ 103°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BAV70 BAV70S BAV70U BAV70W Ptot Tj Tstg Symbol RthJS 250 250 250 250 150 -65 .
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150 Value ≤ 460 ≤ 260 ≤ 240 ≤ 190 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA A mW °C Unit K/W 2 2007-09-19 BAV70.
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Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics Breakdown voltage I(BR) = 100 µA V(BR) 85 - -V Reverse current VR = 70 V VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C IR µA - - 0.
15 - - 30 - - 50 Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 150 mA VF mV - - 715 - - 855 - - 1000 - - 1200 - - 1250 AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, measured at IR = 1mA , RL = 100 Ω CT trr - - 1.
5 pF - - 4 ns Test circuit for reverse recovery time D.
U.
T.
Oscillograph ΙF Pulse generator: tp = 100ns, D = 0.
05, tr = 0.
6ns, Ri = 50Ω Os...


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