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DB3

Diotec Semiconductor
Part Number DB3
Manufacturer Diotec Semiconductor
Description Bidirectional Si-Trigger-Diodes (DIAC)
Published Mar 27, 2005
Detailed Description DB 3, DB 4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Trigger-Dioden (DIAC) Breakover voltage Durchbruchs...
Datasheet PDF File DB3 PDF File

DB3
DB3


Overview
DB 3, DB 4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Trigger-Dioden (DIAC) Breakover voltage Durchbruchsspannung Peak pulse current Max.
Triggerimpuls Glass case Glasgehäuse Weight approx.
Gewicht ca.
Dimensions / Maße in mm 28 .
.
.
45 V ±2A DO-35 SOD-27 0.
13 g see page 16 siehe Seite 16 Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Power dissipation – Verlustleistung Peak pulse current (120 pulse repetition rate) Max.
Triggerstrom (120 Impulse) Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50 /C tP # 10 :s Ptot IPM Tj TS Grenzwerte 150 mW 1) ± 2 A 1) – 40…+100/C – 40…+150/C Kennwerte dV/dt = 10V/:s DB 3 DB 4 V = 98 % VBO *V(BO)F - V(BO)R* Characteristics Breakover voltage Durchbruchspannung VBO VBO IBO )VBO )VF/R 28 .
.
.
36 V 35 .
.
.
45 V < 200 :A < 3.
8 V >5V < 60 K/W 1) Breakover current – Durchbruchstrom Asymmetry of breakover voltage Unsymmetrie der Durchbruchspannug Foldback voltage – Spannungs-Rücksprung )I = IBO to/auf IF = 10 mA Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft dV/dt = 10V/:s RthA 1 ) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlußdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 420 01.
10.
2002 DB 3, DB 4 Typical characteristic of a DIAC – Typische DIAC-Kennlinie Test circuit for a thyristor trigger – Meßschaltung für Thyristor-Zündschaltung 01.
10.
2002 421 ...


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