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DB4

Diotec Semiconductor
Part Number DB4
Manufacturer Diotec Semiconductor
Description Bidirectional Si-Trigger-Diodes (DIAC)
Published Mar 27, 2005
Detailed Description DB 3, DB 4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Trigger-Dioden (DIAC) Breakover voltage Durchbruchs...
Datasheet PDF File DB4 PDF File

DB4
DB4

Overview
DB 3, DB 4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Trigger-Dioden (DIAC) Breakover voltage Durchbruchsspannung Peak pulse current Max.
Triggerimpuls Glass case Glasgehäuse Weight approx.
Gewicht ca.
Dimensions / Maße in mm 28 .
.
.
45 V ±2A DO-35 SOD-27 0.
13 g see page 16 siehe Seite 16 Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Power dissipation – Verlustleistung Peak pulse current (120 pulse repetition rate) Max.
Triggerstrom (120 Impulse) Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50 /C tP # 10 :s Ptot IPM Tj TS Grenzwerte 150 mW 1) ± 2 A 1) – 40…+100/C – 40…+150/C Kennwerte dV/dt = 10V/:s DB 3 DB 4 V = 98 % VBO *V(BO)F - V(BO)R* Characteristics Breakover voltage Durchbruchspannung VBO VBO IBO )VBO )VF/R 28 .
.
.
36 V 35 .
.
.
45 V < 200 :A < 3.
8 V >5V < 60 K/W 1) Breakover current – Durchbruchstrom Asymmetry of breakover voltage Unsymmetrie der Durchbr...


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