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D44H


Part Number D44H
Manufacturer Boca Semiconductor Corporation
Title Complementary Silicon Power Transistors
Description ...
Features ...

File Size 163.00KB
Datasheet D44H PDF File








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D444 : The D444 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications. Features ● VDS=60V; ID=15A RDS(ON)40mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Power switching application ● load switching D444 To-252 Top View Schematic Diagram VDS =60V ID = 15A RDS(ON)= 32mΩ Package Marking and Ordering Information Device Marking Device Device Package D444 D444 TO-252 Reel Size - Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (D.

D4457N : European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 4457 N Kathode Cathode ø 46,8 0,5 1,2 ø 46,8 0,5 8 1,2 Anode max. 7 59 3 3,5 VW K July 1996 http://www.Datasheet4U.com D 4457 N Elektrische Eigenschaften Electrical properties Höchstzul ässige Werte Periodische Spitzensperrspannung Maximum rated values repetitive peak reverse voltage tvj = -40°C... t vj max VRRM 200, 400 600 V V V kA kA kA kA kA A 2s A 2s Stoßspitzensperrspannung Durchlaßstrom-Grenzeffektivwert Dauergrenzstrom non-repetitive peak reverse voltage tvj = +25°C... t vj max RMS forward current mean forward current tc = 111 °C tc = 130 °C VRSM =.

D4457N : N Netz-Gleichrichterdiode Rectifier Diode Datenblatt / Data sheet D4457N Tvj = -40°C... Tvj max VRRM 400 V 600 V 7000 A Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / maximum rated values Periodische Spitzensperrspannung Kenndaten repetitive peak reverse voltages Durchlaßstrom-Grenzeffektivwert maximum RMS on-state current Dauergrenzstrom average on-state current Stoßstrom-Grenzwert surge current Grenzlastintegral I²t-value Elektrische Eigenschaften TC = 111 °C TC = 130 °C Tvj = 25 °C, tP = 10 ms Tvj = Tvj max, tP = 10 ms Tvj = 25 °C, tP = 10 ms Tvj = Tvj max, tP = 10 ms IFRMSM IFAVM 4460 A 3520 A 60000 A 52000 A 18000 10³A²s 13500 10³A²s IFSM I²t Charakte.

D4464C : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

D446C : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

D44C : .

D44C : ·With TO-220 package www.datasheet4u.com ·Complement to type D45C Series ·Very low collector saturation voltage ·Fast switching APPLICATIONS ·Designed for various specific and general purpose application ·Shunt and switching regulators ·Low and high frequency inverters converters and etc. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION D44C Series Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER D44C1,2,3 VCBO Collector-base voltage D44C4,5,6 D44C7,8,9 D44C10,11,12 D44C1,2,3 VCEO Collector-emitter voltage D44C4,5,6 D44C7,8,9 D44C10,11,12 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Total po.

D44C : ·With TO-220 package ·Complement to type D45C Series ·Very low collector saturation voltage ·Fast switching APPLICATIONS ·Designed for various specific and general purpose application ·Shunt and switching regulators ·Low and high frequency inverters converters and etc. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION D44C Series Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER D44C1,2,3 VCBO Collector-base voltage D44C4,5,6 D44C7,8,9 D44C10,11,12 D44C1,2,3 VCEO Collector-emitter voltage D44C4,5,6 D44C7,8,9 D44C10,11,12 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Total power dissipation Junc.

D44C1 : The CENTRAL SEMICONDUCTOR D44C series devices are silicon NPN power transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCES VCEO VEBO IC ICM PD TJ, Tstg ΘJC ΘJA D44C1 D44C4 D44C2 D44C5 D44C3 D44C6 40 55 D44C7 D44C8 D44C9 70 30 45 60 5.0 4.0 6.0 30 -65 to +150 4.2 75 D44C10 D44C11 D44C12 90 80 UNITS V V V A A W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=2.

D44C1 : ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D45C1 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz series, shunt and switching regulators; low and high frequency inverters/ converters and many others. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector C.

D44C1 : ·With TO-220 package ·Complement to type D45C Series ·Very low collector saturation voltage ·Fast switching APPLICATIONS ·Designed for various specific and general purpose application ·Shunt and switching regulators ·Low and high frequency inverters converters and etc. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION D44C Series Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER D44C1,2,3 VCBO Collector-base voltage D44C4,5,6 D44C7,8,9 D44C10,11,12 D44C1,2,3 VCEO Collector-emitter voltage D44C4,5,6 D44C7,8,9 D44C10,11,12 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Total power dissipation Junc.

D44C10 : The CENTRAL SEMICONDUCTOR D44C series devices are silicon NPN power transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCES VCEO VEBO IC ICM PD TJ, Tstg ΘJC ΘJA D44C1 D44C4 D44C2 D44C5 D44C3 D44C6 40 55 D44C7 D44C8 D44C9 70 30 45 60 5.0 4.0 6.0 30 -65 to +150 4.2 75 D44C10 D44C11 D44C12 90 80 UNITS V V V A A W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=2.

D44C10 : ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D45C10 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz series, shunt and switching regulators; low and high frequency inverters/ converters and many others. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 90 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector .

D44C10 : ·With TO-220 package ·Complement to type D45C Series ·Very low collector saturation voltage ·Fast switching APPLICATIONS ·Designed for various specific and general purpose application ·Shunt and switching regulators ·Low and high frequency inverters converters and etc. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION D44C Series Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER D44C1,2,3 VCBO Collector-base voltage D44C4,5,6 D44C7,8,9 D44C10,11,12 D44C1,2,3 VCEO Collector-emitter voltage D44C4,5,6 D44C7,8,9 D44C10,11,12 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Total power dissipation Junc.

D44C11 : ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D45C11 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz series, shunt and switching regulators; low and high frequency inverters/ converters and many others. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 90 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector .

D44C11 : The CENTRAL SEMICONDUCTOR D44C series devices are silicon NPN power transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCES VCEO VEBO IC ICM PD TJ, Tstg ΘJC ΘJA D44C1 D44C4 D44C2 D44C5 D44C3 D44C6 40 55 D44C7 D44C8 D44C9 70 30 45 60 5.0 4.0 6.0 30 -65 to +150 4.2 75 D44C10 D44C11 D44C12 90 80 UNITS V V V A A W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=2.

D44C11 : The D44C11 silicon NPN transistors in a TO−220 type package designed for various specific and general purpose amplifications such as output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz, series, shunt and switching regulators, low and high frequency inverters/converters and many others. Features: D Very Low Collector−Emitter Saturation Voltage D excellent Linearity D Fast Switching Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 80V Collector−Emitter Voltage, VCES . . .




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