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D1004

Seme LAB
Part Number D1004
Manufacturer Seme LAB
Description METAL GATE RF SILICON FET
Published Mar 27, 2005
Detailed Description TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G 5 4 GOLD METALLISED MULTI...
Datasheet PDF File D1004 PDF File

D1004
D1004

Overview
TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I F M K J N • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DT PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN DIM A B C D E F G H I J K M N mm 6.
35 DIA 3.
17 DIA 18.
41 5.
46 5.
21 7.
62 21.
59 3.
94 12.
70 0.
13 24.
76 2.
59 4.
06 Tol.
0.
13 0.
13 0.
25 0.
13 0.
13 MAX 0.
38 0.
13 0.
13 0.
03 0.
13 0.
13 0.
25 Inches 0.
250 DIA 0.
125 DIA 0.
725 0.
215 0.
205 0.
300 0.
850 0.
155 0.
500 0.
005 0.
975 0.
102 0.
160 Tol.
0.
005 0.
005 0.
010 0.
005 0.
005 MAX 0.
015 0.
005 0.
005 0.
001 0.
005 0.
005 0.
010 GATE SOURCE (COMMON) • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • HF/VHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 175W 70V ±20V 20A –65 to 150°C 200°C Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
Website: http://www.
semelab.
co.
uk E-mail: sales@semelab.
co.
uk Prelim.
6/99 D1004UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 80W VDS = 28V f = 175MHz VDS = 28V VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.
4A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 4A 1 3.
2 16 50 20:1 70 Typ.
Max.
Unit V 4 1 7 mA µA V S dB % — 240 120 10 pF pF pF VGS(th) Gate Threshold Voltage * VSWR L...


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