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2SK1517 Datasheet PDF


Part Number 2SK1517
Manufacturer Hitachi Semiconductor
Title Silicon N-Channel MOSFET
Description 2SK1517, 2SK1518 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low ...
Features




• Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1517, 2SK1518 Absolute Maximum Ratings (Ta = 25°C) Ite...

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Datasheet 2SK1517 PDF File








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2SK1512 : ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) APPLICATIONS ·High voltage,high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNI T 900 V ±30 V 10 A 150 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 0.83 ℃/W Thermal Resistance,Junction to Ambient 35 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.finep.

2SK1512-01 : .

2SK1515 : 2SK1515, 2SK1516 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1515, 2SK1516 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1515 2SK1516 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Sym.

2SK1515 : 2SK1515, 2SK1516 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) G 1 2 3 REJ03G0946-0200 (Previous: ADE-208-1286) Rev.2.00 Sep 07, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1515, 2SK1516 Absolute Maximum Ratings Item Drain to source voltage 2SK1515 2SK1516 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Chan.

2SK1515 : isc N-Channel MOSFET Transistor 2SK1515 ESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 450 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERI.

2SK1516 : 2SK1515, 2SK1516 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1515, 2SK1516 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1515 2SK1516 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Sym.

2SK1516 : isc N-Channel MOSFET Transistor ESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYM.

2SK1516 : 2SK1515, 2SK1516 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) G 1 2 3 REJ03G0946-0200 (Previous: ADE-208-1286) Rev.2.00 Sep 07, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1515, 2SK1516 Absolute Maximum Ratings Item Drain to source voltage 2SK1515 2SK1516 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Chan.

2SK1517 : 2SK1517, 2SK1518 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) G 1 2 3 REJ03G0947-0200 (Previous: ADE-208-1287) Rev.2.00 Sep 07, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1517, 2SK1518 Absolute Maximum Ratings Item Drain to source voltage 2SK1517 2SK1518 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Chann.

2SK1517 : isc N-Channel MOSFET Transistor 2SK1517 ESCRIPTION ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 450 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 20 A Ptot Total Dissipation@TC=25℃ 120 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERIS.

2SK1518 : 2SK1517, 2SK1518 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1517, 2SK1518 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1517 2SK1518 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Sym.

2SK1518 : isc N-Channel MOSFET Transistor 2SK1518 ESCRIPTION ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 20 A Ptot Total Dissipation@TC=25℃ 120 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERIS.

2SK1518 : 2SK1517, 2SK1518 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) G 1 2 3 REJ03G0947-0200 (Previous: ADE-208-1287) Rev.2.00 Sep 07, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1517, 2SK1518 Absolute Maximum Ratings Item Drain to source voltage 2SK1517 2SK1518 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Chann.

2SK1519 : 2SK1519, 2SK1520 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1519, 2SK1520 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1519 2SK1520 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol .

2SK1519 : 2SK1519, 2SK1520 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) G 1 23 REJ03G0948-0300 (Previous: ADE-208-1288) Rev.3.00 Apr 27, 2006 D 1. Gate 2. Drain 3. Source S Rev.3.00 Apr 27, 2006 page 1 of 6 2SK1519, 2SK1520 Absolute Maximum Ratings Item Drain to source voltage 2SK1519 2SK1520 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temper.

2SK1519 : isc N-Channel MOSFET Transistor 2SK1519 ESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 450 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 30 A Ptot Total Dissipation@TC=25℃ 200 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERIS.




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