DatasheetsPDF.com

2SK1924

Part Number 2SK1924
Manufacturer Sanyo Semicon Device
Title N-Channel Silicon MOSFET
Description Ordering number:EN4313 N-Channel Silicon MOSFET 2SK1924 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed s...
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· High-speed diode (trr=140ns). Package Dimensions unit:mm 2052C [2SK1924] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-S...

File Size 114.31KB
Datasheet 2SK1924 PDF File







Similar Datasheet

2SK1920 : .

2SK1921 : .

2SK1922 : Ordering number:EN4311 N-Channel Silicon MOSFET 2SK1922 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · High-speed diode (trr=100ns). Package Dimensions unit:mm 2052C [2SK1922] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Conditions Parameter Symbol Conditions Drain-to-Source Breakdown Volta.

2SK1922 : ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 2 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK1922 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL .

2SK1923 : Ordering number:EN4312 N-Channel Silicon MOSFET 2SK1923 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · High-speed diode (trr=120ns). Package Dimensions unit:mm 2052C [2SK1923] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Conditions Parameter Symbol Conditions Drain-to-Source Breakdown Volta.

2SK1923 : ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Chopper regulator and motor drive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A Ptot Total Dissipation@TC=25℃ 60 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK1923 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL.

2SK1924 : ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 6 A Ptot Total Dissipation@TC=25℃ 70 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK1924 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAME.

2SK1925 : Ordering number:ENN4314 N-Channel Silicon MOSFET 2SK1925 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · High-speed diode (trr=150ns). Package Dimensions unit:mm 2056A [2SK1925] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 123 0.6 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Tc=25°C Electrical Characteristics at Ta = 25˚C 5.45 Conditions Parameter Symbol Conditions Drain-to-Source Breakdow.

2SK1925 : ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 120 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1925 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) 2SK1925 SYMBOL.

2SK1928-01R : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com .

2SK1929 : .

2SK192A : TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications VHF Band Amplifier Applications 2SK192A Unit: mm · High power gain: GPS = 24dB (typ.) (f = 100 MHz) · Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) · High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz) Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -18 10 200 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1D Weight: 0.13 g (typ.) Characteristics Symbol Test Condition Gate leakage cu.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)