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2SK1947

Hitachi Semiconductor
Part Number 2SK1947
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK1947 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High spe...
Datasheet PDF File 2SK1947 PDF File

2SK1947
2SK1947

Overview
2SK1947 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current Built-In Fast Recovery Diode (trr = 140 ns) Suitable for Switching regulator, Motor Control Outline TO-3PL D G 1 2 3 S 1.
Gate 2.
Drain (Flange) 3.
Source 2SK1947 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 250 ±30 50 200 50 200 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1947 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 250 ±30 — — 2.
0 — 20 — — — — — — — — — Typ — — — — — 0.
047 30 5810 2360 270 75 2...


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