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2SK2512

NEC
Part Number 2SK2512
Manufacturer NEC
Description SWITCHING N-CHANNEL POWER MOS FET
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2512 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK25...
Datasheet PDF File 2SK2512 PDF File

2SK2512
2SK2512

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2512 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
PACKAGE DIMENSIONS (in millimeter) FEATURES • Low On-Resistance RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A) RDS (on)2 = 23 mΩ (VGS = 4 V, ID = 23 A) 15.
0±0.
3 10.
0±0.
3 3.
2±0.
2 4.
5±0.
2 2.
7±0.
2 3±0.
1 4±0.
2 • Low Ciss Ciss = 2 100 pF TYP.
• Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature * PW ≤ 10 µs, Duty Cycle ≤ 1 % 1 2 3 VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg ± 20 ± 45 ± 180 35 2.
0 150 V A A W W ˚C 0.
7±0.
1 2.
54 1.
3±0.
2 1.
5±0.
2 2.
54 13.
5MIN.
VDSS 60 V 12.
0±0.
2 2.
5±0.
1 0.
65±0.
1 1.
Gate 2.
Drain 3.
Source –55 to +150 ˚C MP-45F (ISOLATED TO-220) Drain Body Diode The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Gate Gate Protection Diode Source Document No.
D10291EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan © 1995 2SK2512 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS (on)1 RDS (on)2 VGS (off) | yfs | IDSS IGSS Ciss Coss Crss td (on) tr td (o...


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