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2SK2571 Datasheet PDF


Part Number 2SK2571
Manufacturer Panasonic Semiconductor
Title Silicon N-Channel MOSFET
Description Power F-MOS FETs 2SK2571 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resi...
Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown 4.5 unit: mm 15.5±0.5 φ3.2±0.1 10.0 3.0±0.3 5˚ 26.5±0.5 5˚ 23.4 22.0±0.5 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipm...

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2SK2570 : 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 1st. Edition Features • Low on-resistance R DS(on) = 0. 8 Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 2 D G 1. Source 2. Gate 3. Drain S 2SK2570 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse)* Pch Tch Tstg 1 Ratings 20 ±10 0.2 0.4 150 150 –55 to +150 Unit V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate.

2SK2570 : 2SK2570 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G1019-0200 (Previous: ADE-208-574) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.8 Ω typ. (VGS = 4 V, ID = 100 mA) • 2.5 V gate drive devices. • Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1 2 G 1. Source 2. Gate 3. Drain S Note: Marking is “ZL–” Rev.2.00 Sep 07, 2005 page 1 of 6 2SK2570 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID ID(pulse)*1 Pch Tch Tstg Ratings.

2SK2571 : Isc N-Channel MOSFET Transistor 2SK2571 ·FEATURES ·With To-3PML package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 450 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 26 PD Total Dissipation @TC=25℃ 100 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case therma.

2SK2572 : Power F-MOS FETs 2SK2572 2SK2572(Tentative) Silicon N-Channel Power F-MOS s Features q Avalanche Unit : mm 15.5±0.5 3.0±0.3 energy capability guaranteed 4.5 q High-speed q Low q No switching ø3.2±0.1 10.0 26.5±0.5 ON-resistance 5˚ 5˚ 2.0 1.2 secondary breakdown 4.0 2.0±0.2 1.1±0.1 2.0 q Non-contact q Solenoid q Motor relay 18.6±0.5 s Applications drive 5˚ 5˚ 5˚ 0.7±0.1 5.45±0.3 5.45±0.3 3.3±0.3 0.7±0.1 q Control equipment mode regulator 5˚ q Switching 1 2 3 2.0 5.5±0.3 drive s Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC = 25˚C Ta= 25˚C Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg R.

2SK2573 : Power F-MOS FETs 2SK2573 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown 4.5 unit: mm 15.5±0.5 φ3.2±0.1 10.0 3.0±0.3 5˚ 26.5±0.5 5˚ 23.4 22.0±0.5 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 2.0 1.2 5˚ 18.6±0.5 5˚ 5˚ 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 3.3±0.3 0.7±0.1 Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 ±30 ±20 ±40 20 100 3 150 −55 to +150 Unit V V A A mJ W °C °C.




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