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2SK2573

Panasonic Semiconductor
Part Number 2SK2573
Manufacturer Panasonic Semiconductor
Description Silicon N-Channel Power F-MOS FET
Published Mar 30, 2005
Detailed Description Power F-MOS FETs 2SK2573 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guarantee...
Datasheet PDF File 2SK2573 PDF File

2SK2573
2SK2573

Overview
Power F-MOS FETs 2SK2573 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown 4.
5 unit: mm 15.
5±0.
5 φ3.
2±0.
1 10.
0 3.
0±0.
3 5˚ 26.
5±0.
5 5˚ 23.
4 22.
0±0.
5 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 2.
0 1.
2 5˚ 18.
6±0.
5 5˚ 5˚ 4.
0 2.
0±0.
2 1.
1±0.
1 2.
0 0.
7±0.
1 3.
3±0.
3 0.
7±0.
1 Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 ±30 ±20 ±40 20 100 3 150 −55 to +150 Unit V V A A mJ W °C °C 5˚ 5.
5±0.
3 s Absolute Maximum Ratings (TC = 25°C) 5.
45±0.
3 5.
45±0.
3 1 2 3 1: Gate 2: Drain 3: Source TOP-3E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C L = 0.
1mH, IL = 20A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss ton tf td(off) Rth(ch-c) Rth(ch-a) Conditions VDS = 400V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 10A VDS = 25V, ID = 10A IDR = 20A, VGS = 0 3000 VDS = 20V, VGS = 0, f = 1MHz 430 175 VDD = 150V, ID = 10A VGS = 10V, RL = 15Ω 150 140 480 1.
25 41.
67 7.
2 500 1 0.
32 12 −2.
8 5 0.
4 min typ max 100 ±1 Unit µA µA V V Ω S V pF pF pF ns ns ns °C/W °C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere 2.
0 1 Power F-MOS FETs Area of safe operation (ASO) 102 IDP ID ...


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