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2SK2715 Datasheet PDF

Rohm
Part Number 2SK2715
Manufacturer Rohm
Title Switching Transistor
Description Transistors Switching (500V, 2A) 2SK2715 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-sour...
Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = ...

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2SK270 : 2SK270 SILICON MONOLITHIC N CHANNEL JUNCTION TYPE LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES . 1 Chip Dual Type. . Recommended for First Differential Stages of DC Amplifiers. . Very High Yf I s1 : iYf s l=20mS(Typ.) (VDS=10V, Vgs=0, f=lkHz, I DS S=3mA) . Good Pair Characteristics : lVGSl-VGS2l=30mV(Max.)(VDS=10V, lD=lmA) . High Breakdown Voltage : VGDS=_ 40(Min. . Very Low Noise : NF=0. 5dB(Typ. (VDS =10V, lD=lmA, R g =lkQ, f=lkHz) . High Input Impedance : lGSS =- 10nA(Max. (Vgs =- 30V) . Complementary to 2SJ90 . MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation SYMBOL VGDS IG PD Junction Temperatu.

2SK2700 : 2SK2700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSIII) 2SK2700 Chopper Regulator, DC–DC Converter and Motor Drive Applications z Low drain–source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 3.7 Ω (typ.) Unit: mm : |Yfs| = 2.6 S (typ.) : IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain–source voltage Drain–gate voltage (RGS = 20 kΩ) Gate–source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 3 9 40 295 3 http://www.DataSheet4U.net/ Unit V V V A A W mJ A mJ °C °C .

2SK2701 : 2SK2701 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ±7 ± 28 35 (Tc = 25ºC) 130 7 150 –55 to +150 (Ta = 25ºC) External dimensions 1 FM20 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (on) Ciss Coss Crss t d (on) tr t d (off) tf VSD 2.0 3.5 3.0 5 0.84 720 150 65 25 40 70 50 1.0 1.5 1.10 min 450 Ratings typ max ± 100 100 4.0 Unit V nA µA V S Ω pF pF pF ns ns ns ns V I SD = 7A, VGS = 0V I D = 3.5A, VDD = 200V, RL = 57Ω, VGS = 10V, See Figure 2 on Page 5. (Ta = 25ºC) Unit V V Conditions I D = 100µA, VGS = 0V VGS = ± 30V VDS = 450V, VGS = 0V VDS = 10V, I D = 1mA VDS = 20V, I D = 3.5A VGS =.

2SK2701A : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 450 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 28 A PD Total Dissipation @TC=25℃ 35 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.57 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specifi.

2SK2702 : 2SK2702 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ± 10 ± 40 35 (Tc = 25ºC) 300 10 150 –55 to +150 (Ta = 25ºC) External dimensions 1 FM20 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (on) Ciss Coss Crss t d (on) tr t d (off) tf VSD 2.0 5 3.0 7 0.66 1000 200 95 25 30 85 45 1.0 1.5 0.80 min 450 Ratings typ max ± 100 100 4.0 Unit V nA µA V S Ω pF pF pF ns ns ns ns V I SD = 10A, VGS = 0V I D = 5A, VDD = 200V, RL = 40Ω, VGS = 10V, See Figure 2 on Page 5. (Ta = 25ºC) Unit V V Conditions I D = 100µA, VGS = 0V VGS = ± 30V VDS = 450V, VGS = 0V VDS = 10V, I D = 1mA VDS = 20V, I D = 5A VGS = .

2SK2703 : 2SK2703 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ± 10 ± 40 75 (Tc = 25ºC) 300 10 150 –55 to +150 (Ta = 25ºC) External dimensions 2 FM100 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (on) Ciss Coss Crss t d (on) tr t d (off) tf VSD 2.0 5 3.0 7 0.66 1000 200 95 25 30 85 45 1.0 1.5 0.80 min 450 Ratings typ max ± 100 100 4.0 Unit V nA µA V S Ω pF pF pF ns ns ns ns V I SD = 10A, VGS = 0V I D = 5A, VDD = 200V, RL = 40Ω, VGS = 10V, See Figure 2 on Page 5. (Ta = 25ºC) Unit V V Conditions I D = 100µA, VGS = 0V VGS = ± 30V VDS = 450V, VGS = 0V VDS = 10V, I D = 1mA VDS = 20V, I D = 5A VGS =.

2SK2704 : 2SK2704 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ± 13 ± 52 40 (Tc = 25ºC) 400 13 150 –55 to +150 (Ta = 25ºC) External dimensions 1 FM20 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (on) Ciss Coss Crss t d (on) tr t d (off) tf VSD 2.0 6.0 3.0 9.0 0.48 1300 280 130 30 40 95 50 1.0 1.5 0.57 min 450 Ratings typ max ± 100 100 4.0 Unit V nA µA V S Ω pF pF pF ns ns ns ns V I SD = 13A, VGS = 0V I D = 6.5A, VDD 200V, RL = 30Ω, VGS = 10V, See Figure 2 on Page 5. (Ta = 25ºC) Unit V V Conditions I D = 100µA, VGS = 0V VGS = ± 30V VDS = 450V, VGS = 0V VDS = 10V, I D = 1mA VDS = 20V, I D = 6.5A.

2SK2705 : 2SK2705 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ± 13 ± 52 75 (Tc = 25ºC) 400 13 150 –55 to +150 (Ta = 25ºC) External dimensions 2 FM100 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (on) Ciss Coss Crss t d (on) tr t d (off) tf VSD 2.0 6.0 3.0 9.0 0.48 1300 280 130 30 40 95 50 1.0 1.5 0.57 min 450 Ratings typ max ± 100 100 4.0 Unit V nA µA V S Ω pF pF pF ns ns ns ns V I SD = 13A, VGS = 0V I D = 6.5A, VDD 200V, RL = 30Ω, VGS = 10V, See Figure 2 on Page 5. (Ta = 25ºC) Unit V V Conditions I D = 100µA, VGS = 0V VGS = ± 30V VDS = 450V, VGS = 0V VDS = 10V, I D = 1mA VDS = 20V, I D = 6.5.

2SK2706 : 2SK2706 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ± 18 ± 72 85 (Tc = 25ºC) 700 18 150 –55 to +150 (Ta = 25ºC) External dimensions 2 FM100 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (on) Ciss Coss Crss t d (on) tr t d (off) tf VSD 2.0 10 3.0 15 0.24 2500 500 260 40 60 170 85 1.0 1.5 0.30 min 450 Ratings typ max ± 100 100 4.0 Unit V nA µA V S Ω pF pF pF ns ns ns ns V I SD = 18A, VGS = 0V I D = 9A, VDD = 200V, RL = 22Ω, VGS = 10V, See Figure 2 on Page 5. (Ta = 25ºC) Unit V V Conditions I D = 100µA, VGS = 0V VGS = ± 30V VDS = 450V, VGS = 0V VDS = 10V, I D = 1mA VDS = 20V, I D = 9A V.

2SK2707 : 2SK2707 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 600 ± 30 ± 4.5 ± 18 35 (Tc = 25ºC) 50 4.5 150 –55 to +150 (Ta = 25ºC) External dimensions 1 FM20 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (on) Ciss Coss Crss t d (on) tr t d (off) tf VSD 2.0 2.4 3.0 3.5 1.45 560 130 65 20 30 65 90 0.9 1.5 1.85 min 600 Ratings typ max ± 100 100 4.0 Unit V nA µA V S Ω pF pF pF ns ns ns ns V I SD = 4.5A, VGS = 0V I D = 2A, VDD = 250V, RL = 125Ω, VGS = 10V, See Figure 2 on Page 5. (Ta = 25ºC) Unit V V Conditions I D = 100µA, VGS = 0V VGS = ± 30V VDS = 600V, VGS = 0V VDS = 10V, I D = 1mA VDS = 20V, I D = 2A .

2SK2708 : 2SK2708 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 600 ± 30 ±7 ± 28 40 (Tc = 25ºC) 150 7 150 –55 to +150 (Ta = 25ºC) External dimensions 1 FM20 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (on) Ciss Coss Crss t d (on) tr t d (off) tf VSD 2.0 4.0 3.0 6.0 0.85 950 220 120 30 27 100 50 0.9 1.5 1.1 min 600 Ratings typ max ± 100 100 4.0 Unit V nA µA V S Ω pF pF pF ns ns ns ns V I SD = 7A, VGS = 0V I D = 3.5A, VDD = 250V, RL = 71Ω, VGS = 10V, See Figure 2 on Page 5. (Ta = 25ºC) Unit V V Conditions I D = 100µA, VGS = 0V VGS = ± 30V VDS = 600V, VGS = 0V VDS = 10V, I D = 1mA VDS = 20V, I D = 3.5A VG.

2SK2709 : 2SK2709 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 600 ± 30 ± 8.5 ± 34 85 (Tc = 25ºC) 300 8.5 150 –55 to +150 (Ta = 25ºC) External dimensions 2 FM100 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (on) Ciss Coss Crss t d (on) tr t d (off) tf VSD 2.0 5.0 3.0 7.0 0.65 1200 270 150 30 40 110 65 0.95 1.5 0.85 min 600 Ratings typ max ± 100 100 4.0 Unit V nA µA V S Ω pF pF pF ns ns ns ns V I SD = 8.5A, VGS = 0V I D = 4A, VDD = 250V, RL = 62.5Ω, VGS = 10V, See Figure 2 on Page 5. (Ta = 25ºC) Unit V V Conditions I D = 100µA, VGS = 0V VGS = ± 30V VDS = 600V, VGS = 0V VDS = 10V, I D = 1mA VDS = 20V, I .

2SK2710 : 2SK2710 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 600 ± 30 ± 12 ± 48 85 (Tc = 25ºC) 400 12 150 –55 to +150 (Ta = 25ºC) External dimensions 2 FM100 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (on) Ciss Coss Crss t d (on) tr t d (off) tf VSD 2.0 7.5 3.0 11 0.42 1900 410 240 35 45 160 70 0.95 1.5 0.55 min 600 Ratings typ max ± 100 100 4.0 Unit V nA µA V S Ω pF pF pF ns ns ns ns V I SD = 12A, VGS = 0V I D = 6A, VDD = 250V, RL = 20.8Ω, VGS = 10V, See Figure 2 on Page 5. (Ta = 25ºC) Unit V V Conditions I D = 100µA, VGS = 0V VGS = ± 30V VDS = 600V, VGS = 0V VDS = 10V, I D = 1mA VDS = 20V, I D = .

2SK2711 : www.DataSheet.co.kr Transistors Switching (250V, 16A) 2SK2711 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 130 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Transistors FElectrical characteristics (Ta = 25_C) 2SK2711 FElectrical characteristic curves 131 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Transistors 2SK2711 132 Datasheet pdf - http://www.Da.

2SK2713 : www.DataSheet.co.kr Transistors Switching (450V, 5A) 2SK2713 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 134 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Transistors FElectrical characteristics (Ta = 25_C) 2SK2713 FElectrical characteristic curves 135 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Transistors 2SK2713 136 Datasheet pdf - http://www.DataSheet4.

2SK2717 : 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.4 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperat.




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