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2SK2736

Part Number	2SK2736
Manufacturer	Hitachi Semiconductor
Description	Silicon N-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 1st. Edition Features • Low on-resistance...
Datasheet	2SK2736 PDF File

Overview

2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 1st.
Edition Features • Low on-resistance R DS(on) = 20 mΩ typ.
(VGS = 10V, ID = 15 A) • 4V gate drive devices.
• High speed switching Outline TO–220CFM D G 1 2 3 1.
Gate 2.
Drain 3.
Source S 2SK2736 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 30 120 30 25 150 –55 to +150 Unit V V A A A W °C °C 2 2S...

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