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2SK2788

Hitachi Semiconductor
Part Number 2SK2788
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st. Edition Features • Low on-resistance R DS...
Datasheet PDF File 2SK2788 PDF File

2SK2788
2SK2788

Overview
2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st.
Edition Features • Low on-resistance R DS(on) = 0.
12Ω typ (VGS = 10 V, I D = 1 A) • Low drive current • High speed switching • 4V gate drive devices.
Outline UPAK 3 D 2 1 4 G 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2SK2788 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)* 2 1 Ratings 60 ±20 2 4 2 1 150 –55 to +150 Unit V V A A A W °C °C Body to drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Pch* Tch Tstg Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
When u...


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