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2SK2789

Toshiba Semiconductor
Part Number 2SK2789
Manufacturer Toshiba Semiconductor
Description Silicon N Channel MOS Type Field Effect Transistor
Published Mar 30, 2005
Detailed Description 2SK2789 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2789 Chopper Regulator, DC−DC Convert...
Datasheet PDF File 2SK2789 PDF File

2SK2789
2SK2789

Overview
2SK2789 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2789 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.
) l High forward transfer admittance : |Yfs| = 16 S (typ.
) l Low leakage current : IDSS = 100 µA (max) (VDS = 100 V) l Enhancement−mode : Vth = 0.
8~2.
0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 100 100 ±20 27 108 60 193 27 6 150 −55~150 Unit V V V A A W mJ A mJ °C °C JEDEC ― JEITA ― TOSHIBA 2-10S1B Weight: 1.
5 g (typ.
) Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 2.
08 83.
3 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 428 µH, IAR = 27 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC ― JEITA ― TOSHIBA 2-10S2B Weight: 1.
5 g (typ.
) 1 2002-06-27 Electrical Characteristics (Ta = 25°C) 2SK2789 Characteristics Symbol Test Condition Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss VGS = ±16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VDS ...


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