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2SK2796

Hitachi Semiconductor
Part Number 2SK2796
Manufacturer Hitachi Semiconductor
Description Silicon N Channel MOS FET
Published Mar 30, 2005
Detailed Description 2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jun 1998 Feat...
Datasheet PDF File 2SK2796 PDF File

2SK2796
2SK2796

Overview
2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
12Ω typ.
• 4V gate drive devices.
• High speed switching Outline DPAK |1 4 4 D 1 2 G 3 S 1 2 3 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 5 20 5 5 2.
14 20 150 –55 to +150 U...


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