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2SK982

Toshiba Semiconductor
Part Number 2SK982
Manufacturer Toshiba Semiconductor
Description Silicon N Channel MOS Type Field Effect Transistor
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK982 High Speed Switching Applications Analog Switch Applic...
Datasheet PDF File 2SK982 PDF File

2SK982
2SK982

Overview
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK982 High Speed Switching Applications Analog Switch Applications Interface Applications 2SK982 Unit: mm • Excellent switching times: ton = 14 ns (typ.
) • High forward transfer admittance: |Yfs| = 100 mS (min) @ID = 50 mA • Low on resistance: RDS (ON) = 0.
6 Ω (typ.
) @ ID = 50 mA • Enhancement-mode • Complementary to 2SJ148 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range VDS VGSS ID IDP PD Tch Tstg 60 ±20 200 800 400 150 −55~150 V V mA mW °C °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1H Weight: 0.
21 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Forward transfer admittance Drain-source ON resistance Drain-source ON voltage Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol Test Condition IGSS IDSS V (BR) DSS Vth ⎪Yfs⎪ RDS (ON) VDS (ON) Ciss Crss Coss VGS = ±10 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VGS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 50 mA ID = 50 mA, VGS = 10 V ID = 50 mA, VGS = 10 V VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 ...


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