3SK249 Datasheet PDF

Part Number 3SK249
Manufacturer Toshiba Semiconductor
Description TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK249 3SK249 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior...
Features n the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristi...

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Datasheet 3SK249 PDF File

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3SK240 : TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK240 3SK240 TV Tuner, UHF RF Amplifier Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Gate 1-drain voltage Gate 2-drain voltage Gate 1-source voltage Gate 2-source voltage Gate 1 current Gate 2 current Power dissipation Channel temperature Storage temperature range Symbol VG1D0 VG2D0 VG1S VG2S IG1 IG2 PD Tch Tstg Rating -9 -9 -4 -4 1 1 150 125 -55~125 Unit V V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1A Weight: 0.013 g (typ.) Characteristics Gate 1 leakage current Gate 2 leakage current Drain current Gate 1-source cut-off voltage Gate 2-source c.

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3SK248 : Ordering number:ENN4540 N-Channel Enhancement Silicon MOSFET 3SK248 Muting/Switching Applications Features · MOSFET with a back gate terminal. · Enhancement type. · Small ON resistance. · Small-sized package permitting 3SK248-applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2100A 1.9 0.95 0.95 0.4 43 [3SK248] 0.16 0 to 0.1 1.5 0.5 2.5 12 0.95 0.85 2.9 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID PD Tch Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Drain-to-So.

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