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FDS6682


Part Number FDS6682
Manufacturer Fairchild Semiconductor
Title 30V N-Channel MOSFET
Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventiona...
Features
• 14 A, 30 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V RDS(ON) = 9.0 mΩ @ VGS = 4.5 V
• Low gate charge (22 nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted...

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FDS6680 : This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 11.5 A, 30 V. RDS(ON) = 0.010 Ω @ VGS = 10 V RDS(ON) = 0.015 Ω @ VGS = 4.5 V. Optimized for use in switching DC/DC converters with PWM controllers. Very fast switching. Low gate charge (typical Qg = 19 nC). SOT-23 SuperSOTTM-6 Supe.

FDS6680A : This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 12.5 A, 30 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.013 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge. High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D 5 4 3 2 1 S FD 0A 8 66 pin.

FDS6680A : This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V • Ultra-low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 5 4 6 3 7 2 8 1 Absolute Maximum Ratings TA=25oC unless otherwise note.

FDS6680AS : Features The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode. Applications • 11.5 A, 30 V. RDS(ON) max= 10.0 mΩ @ VGS = 10 V RDS(ON) max= 12.5 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (22nC typical) • High perform.

FDS6680S : The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode. Features • 11.5 A, 30 V. RDS(ON) = 0.011 Ω @ VGS = 10 V RDS(ON) = 0.016 Ω @ VGS = 4.5 V • • • Includes SyncFET Schottky body diode Low gate charge (17nC typical) High performance trench technology.

FDS6681Z : This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • –20 A, –30 V. RDS(ON) = 4.6 mΩ @ VGS = –10 V RDS(ON) = 6.5 mΩ @ VGS = –4.5 V • Extended VGSS range (–25V) for battery applications • HBM ESD protection level of 8kV typical (note 3) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Termination is Lead-free and RoHS Compliant D D D D SO-8 G SS S Absolute Maximum Ratings.

FDS6681Z : This P−Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • –20 A, –30 V ♦ RDS(ON) = 4.6 mΩ @ VGS = –10 V ♦ RDS(ON) = 6.5 mΩ @ VGS = –4.5 V • Extended VGSS Range (–25 V) for Battery Applications • HBM ESD Protection Level of 8 kV Typical (Note 3) • High Performance Trench Technology for Extremely Low RDS(ON) • High Power and Current Handling Capability • Termination is Lead−free and RoHS Compliant • This is a Pb−Free and Halide Free Device ABSOLUTE MAXIMUM .

FDS6685 : This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • -8.8 A, -30 V. RDS(ON) = 0.020 Ω @ VGS = -10 V RDS(ON) = 0.035 Ω @ VGS = -4.5 V Extended VGSS range (±25V) for battery applications. Low gate charge (19nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. • • • • • Applications • • • B.

FDS6685 : Features This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). • –8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.5 V • Low gate charge (17nC typical) Applications • Fast switching speed • Power management • Load switch • Battery protection • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source Volt.

FDS6688 : This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features • 16 A, 30 V. RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 7 mΩ @ VGS = 4.5 V • Ultra-low gate charge (40 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • DC/DC converter D D SO-8 D D DD D D 5 6 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25oC unless otherwise noted 7 8 Absolute Maximum Ratings Symbol VDS.

FDS6688S : The FDS6688S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6688S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Features • 16 A, 30 V. RDS(ON) = 6.0 mΩ @ VGS = 10 V RDS(ON) = 7.5 mΩ @ VGS = 4.5 V • • Includes SyncFET Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability Applications www.DataSheet4U.com • DC/DC converter • Motor drives D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolu.

FDS6689S : The FDS6689S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6688S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Features • 16 A, 30 V. RDS(ON) = 5.4 mΩ @ VGS = 10 V RDS(ON) = 6.5 mΩ @ VGS = 4.5 V • • Includes SyncFET Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching • • High power and current handling capability 100% RG (Gate Resistance) tested Applications www.DataSheet4U.com • Synchronous Rectifier for DC/DC converter – • • No.




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