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FDS6690

Fairchild Semiconductor
Part Number FDS6690
Manufacturer Fairchild Semiconductor
Description Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description January 2000 FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General Description This N Channel ...
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FDS6690
FDS6690

Overview
January 2000 FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General Description This N Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features 10 A, 30 V.
RDS(ON) = 0.
0135 Ω @ VGS = 10 V RDS(ON) = 0.
0200 Ω @ VGS = 4.
5 V.
Optimized for use in switching DC/DC converters with PWM controllers.
Very fast switching .
Low gate charge (Qg typ = 13 nC).
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S FD 9 0 66 S G 5 6 7 8 4 3 2 1 SO-8 pin 1 S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25oC unless other wise noted FDS6690 30 ±20 (Note 1a) Units V V A 10 50 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 2.
5 1.
2 1 -55 to 150 W TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W © 1998 Fairchild Semiconductor Corporation FDS6690 Rev.
C Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA ID = 250 µA, Referenced to 25 C VDS = 24 V, VGS = 0 V TJ = 55°C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 2) o 30 21 1 10 100 -100 V mV /oC µA µA nA nA ∆BVDSS/∆TJ Breakdown Voltage Temp.
Coefficient IDSS Zero Gate Voltage Drain Current VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VG...


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