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F1001C

Polyfet RF Devices
Part Number F1001C
Manufacturer Polyfet RF Devices
Description RF POWER VDMOS TRANSISTOR
Published Mar 30, 2005
Detailed Description polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applic...
Datasheet PDF File F1001C PDF File

F1001C
F1001C

Overview
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
TM "Polyfet" process features gold metal for greatly extended lifetime.
Low output capacitance and high Ft enhance broadband performance F1001C PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance 3.
13 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V o -65 o C to 150o C 2 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 16 60 TYP 20WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.
2 A, Vds = 28.
0 V, F = 175 MHz Idq = 0.
2 A, Vds = 28.
0 V, F = 175 MHz Idq = 0.
2 A, Vds = 28.
0 V, F = 175 MHz η VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 0.
8 1 5.
5 33 4 20 MIN 65 1 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.
05 A, Vds = 28.
0 V, Vds = 0 V, Ids = 0.
1 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 4 A Vgs = 20V, Vds = 10V Vds = 28.
0 V, Vgs = 0V, F = 1 MHz Vds = 28.
0 V, Vgs = 0V, F = 1 MHz Vds = 28.
0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) ...


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