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F1027

Part Number	F1027
Manufacturer	Polyfet RF Devices
Description	RF POWER VDMOS TRANSISTOR
Published	Mar 30, 2005
Detailed Description	polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applic...
Datasheet	F1027 PDF File

Overview

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
TM "Polyfet" process features gold metal for greatly extended lifetime.
Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.
4 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1027 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 200 Watts Gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V -65 o C to 150o C 24 A RF CHARACTERISTICS ( 200 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficienc Load Mismatch Toleranc MIN 10 60 20:1 TYP...

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