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F1209

Polyfet RF Devices
Part Number F1209
Manufacturer Polyfet RF Devices
Description RF POWER VDMOS TRANSISTOR
Published Mar 30, 2005
Detailed Description polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applic...
Datasheet PDF File F1209 PDF File

F1209
F1209

Overview
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features gold metal for greatly extended lifetime.
Low output capacitance and high Ft enhance broadband performance TM F1209 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Push - Pull Package Style AD HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 80 Watts Junction to Case Thermal Resistance 2.
1 o C/W Maximum Junction Tempera...


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