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F1260

Polyfet RF Devices
Part Number F1260
Manufacturer Polyfet RF Devices
Description RF POWER VDMOS TRANSISTOR
Published Mar 30, 2005
Detailed Description polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applic...
Datasheet PDF File F1260 PDF File

F1260
F1260

Overview
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features gold metal for greatly extended lifetime.
Low output capacitance and high Ft enhance broadband performance TM F1260 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 60 Watts Single Ended Package Style AT HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 150 Watts Junction to Case Thermal Resistance 1.
2 o C/W Maximum Junction Tempe...


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