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ES1

NXP
Part Number ES1
Manufacturer NXP
Description SMA ultra fast low-loss controlled avalanche rectifiers
Published Mar 30, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 ES1 series SMA ultra fast low-loss controlled avalanche rect...
Datasheet PDF File ES1 PDF File

ES1
ES1

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 ES1 series SMA ultra fast low-loss controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Ideal for surface mount automotive applications • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • UL 94V-O classified plastic package • Shipped in 12 mm embossed tape • Marking: cathode, date code, type code • Easy pick and place.
olumns ES1 series DESCRIPTION DO-214AC surface mountable package with glass passivated chip.
The well-defined void-free case is of a transfer-moulded thermo-setting plastic.
The small rectangular package has two J bent leads.
cathode band k a Top view Side view MSA474 Fig.
1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM ES1A ES1B ES1C ES1D VR continuous reverse voltage ES1A ES1B ES1C ES1D VRMS root mean square voltage ES1A ES1B ES1C ES1D IF(AV) IFSM average forward current non-repetitive peak forward current averaged over any 20 ms period; Ttp = 120 °C; see Fig.
2 t = 8.
3 ms half sine wave; Tj = 25 °C prior to surge; VR = VRRMmax See Fig.
3 − − − − − − 35 70 105 140 1 25 V V V V A A − − − − 50 100 150 200 V V V V PARAMETER repetitive peak reverse voltage − − − − 50 100 150 200 V V V V CONDITIONS MIN.
MAX.
UNIT Tstg Tj storage temperature junction temperature −65 −65 +175 +175 °C °C 2000 Feb 14 2 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL VF IR trr Cd PARAMETER forward voltage reverse current reverse recovery time diode capacitance CONDITIONS IF = 1 A; see Fig.
4 VR = VRRMmax; see Fig.
5 VR = VRRMmax; Tj = 165 °C; see Fig.
5 − − − TYP.
ES1 series...


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