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BA318

NXP
Part Number BA318
Manufacturer NXP
Description High-speed diodes
Published Apr 1, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA316; BA317; BA318 High-speed diodes Product specification Supersedes data ...
Datasheet PDF File BA318 PDF File

BA318
BA318

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA316; BA317; BA318 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max.
4 ns • General application • Continuous reverse voltage: 10 V, 30 V, 50 V • Repetitive peak reverse voltage: max.
15 V, 40 V, 60 V • Repetitive peak forward current: max.
225 mA.
The diodes are type branded.
handbook, halfpage k BA316; BA317; BA318 DESCRIPTION The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.
a MAM246 APPLICATIONS • High-speed switching.
Fig.
1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM BA316 BA317 BA318 VR continuous reverse voltage BA316 BA317 BA318 IF IFRM IFSM continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.
4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1.
Device mounted on an FR4 printed circuit-board; lead length 10 mm.
total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.
5 350 +200 200 A A A mW °C °C see Fig.
2; note 1 − − − − − 10 30 50 100 225 V V V mA mA PARAMETER repetitive peak reverse voltage CONDITIONS MIN.
− − − − 15 40 60 V V V MAX.
UNIT 1996 Sep 03 2 Philips Semiconductors Product specification High-speed diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified.
SYMBOL VF PARAMETER forward voltage see Fig.
3 IF = 1 mA IF = 10 mA IF = 100 mA IR reverse current BA316 BA317 see Fig.
5 VR = 10 V VR = 10 V; Tj = 150 °C VR = 10 V VR = 30 V VR = 30 V; Tj = 150 °C BA318 VR = 30 V VR = 50 V VR = 50 V; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; V...


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