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2SD1350

Panasonic Semiconductor
Part Number 2SD1350
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching s Features ...
Datasheet PDF File 2SD1350 PDF File

2SD1350
2SD1350

Overview
Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching s Features q q q q q Unit: mm 2.
4±0.
2 2.
0±0.
2 3.
5±0.
1 High collector to base voltage VCBO.
High collector to emitter voltage VCEO.
Large collector power dissipation PC.
Low collector to emitter saturation voltage VCE(sat).
M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
(Ta=25˚C) Ratings 400 600 400 500 5 1 500 1 150 –55 ~ +150 1cm2 Unit V 6.
9±0.
1 1.
5 0.
4 2.
5±0.
1 1.
0 1.
0 1.
5 R0.
9 R0.
9 1.
0±0.
1 0.
85 Parameter Collector to base voltage Collector to 2SD1350 2SD1350A 2SD1350 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 0.
55±0.
1 1.
25±0.
05 0.
45±0.
05 3 2 1 emitter voltage 2SD1350A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V V A mA W ˚C ˚C 1:Base 2:Collector 3:Emitter 2.
5 2.
5 EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.
7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage 2SD1350 2SD1350A 2SD1350 2SD1350A (Ta=25˚C) Symbol VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob ton tf tstg Conditions IC = 100µA, IE = 0 IC = 500µA, IB = 0 IE = 100µA, IC = 0 VCE = 5V, IC = 30mA IC = 250mA, IB = 50mA* IC = 250mA, IB = 50mA* VCB = 30V, IE = –20mA, f = 200MHz VCB = 30V, IE = 0, f = 1MHz VCC = 200V, IC = 100mA IB1 = 10mA, IB2 = –10mA VCC = 200V, IC = 100mA IB1 = 10mA, IB2 = –10mA VCC = 200V, IC = 100mA IB1 = 10mA, IB2 = –10mA 0.
4 1.
0 0.
7 1.
0 3.
6 4.
0 * min 400 600 400 500 5 30 typ max 4.
1±0.
2 s Absolute Maximum Ratings R 0.
4.
5±0.
1 7 Unit V V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time 2SD1350 2SD1350A 2SD1350 2...


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