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2SD1366

Hitachi Semiconductor
Part Number 2SD1366
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD1366 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3...
Datasheet PDF File 2SD1366 PDF File

2SD1366
2SD1366

Overview
2SD1366 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 4 1.
Base 2.
Collector 3.
Emitter 4.
Collector (Flange) 2SD1366 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 25 20 5 1 1.
5 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1.
PW ≤ 10 ms, Duty cycle ≤ 20%.
2.
Value on the alumina ceramic board (12.
5 × 20 × 0.
7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5 — — 1 Typ — — — — Max — — — 0.
1 0.
1 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VEB = 4 V, IC = 0 VCE = 2 V, IC = 0.
5 A, Pulse Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage ...


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