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2SD1367

Hitachi Semiconductor
Part Number 2SD1367
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD1367 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline UP...
Datasheet PDF File 2SD1367 PDF File

2SD1367
2SD1367

Overview
2SD1367 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline UPAK 1 3 2 4 1.
Base 2.
Collector 3.
Emitter 4.
Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 20 16 6 2 3 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1.
PW ≤ 10 ms, Duty cycle ≤ 20%.
2.
Value on the alumina ceramic board (12.
5 × 20 × 0.
7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 20 16 6 — — 1 Typ — — — — Max — — — 0.
1 0.
1 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 16 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.
1 A, Pulse Collector to emitter breakdown V(BR)CEO voltage ...


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