DatasheetsPDF.com

2SD1409A

Toshiba Semiconductor
Part Number 2SD1409A
Manufacturer Toshiba Semiconductor
Description NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1409A High Voltage Switching Applications ...
Datasheet PDF File 2SD1409A PDF File

2SD1409A
2SD1409A

Overview
2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1409A High Voltage Switching Applications Industrial Applications Unit: mm • • High DC current gain: hFE = 600 (min.
) (VCE = 2 V, IC = 2 A) Monolithic construction with built-in base-emitter shunt resistor Absolute Maximum Ratings (Ta = 25°C) Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C ymbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 600 400 5 6 1 2.
0 25 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA ― SC-67 TOSHIBA 2-10R1A Note1: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in Weight: 1.
7 g (typ.
) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, et...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)