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2SD1424

Panasonic Semiconductor
Part Number 2SD1424
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Transistor 2SD1424 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 4.0±0.2 s Features q q q...
Datasheet PDF File 2SD1424 PDF File

2SD1424
2SD1424

Overview
Transistor 2SD1424 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 4.
0±0.
2 s Features q q q 0.
7±0.
1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 50 40 15 100 50 300 150 –55 ~ +150 Unit V 1 2 3 1.
27 1.
27 V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 2.
54±0.
15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT NV Conditions VCB = 10V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = –2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 50 40 15 400 0.
05 200 80 2000 0.
2 V MHz mV min typ max 0.
1 1 Unit µA µA V V V *h FE Rank classification R 400 ~ 800 S T hFE 600 ~ 1200 1000 ~ 2000 Rank 2.
0±0.
2 marking +0.
2 0.
45–0.
1 15.
6±0.
5 Optimum for high-density mounting.
Allowing supply with the radial taping.
High foward current transfer ratio hFE.
3.
0±0.
2 1 Transistor PC — Ta 500 120 Ta=25˚C 100 100 25˚C Ta=75˚C 80 –25˚C 2SD1424 IC — VCE 120 VCE=10V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) 80 IB=100µA 90µA 80µA 70µA 60µA 50µA 40µA 30µA 300 60 Collector current IC (mA) 400 60 200 40 40 100 20 20µA 10µA 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.
4 0.
8 1.
2 1.
6 2.
0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1...


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