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2SD1899-Z

Part Number	2SD1899-Z
Manufacturer	NEC
Description	NPN Transistor
Published	Apr 3, 2005
Detailed Description	DATA SHEET SILICON POWER TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SD1899-Z is designed f...
Datasheet	2SD1899-Z PDF File

Overview

DATA SHEET SILICON POWER TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SD1899-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.
FEATURES • High hFE: hFE = 100 to 400 • Low VCE(sat): VCE(sat) ≤ 0.
25 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage Collector Current (DC) Collector Current (pulse) Note 1 Base Current (DC) Total Power Dissipation (TA = 25°C) Note 2 Total Power Dissipation (TC = 25°C) Junction Temperature Storage Temperature VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT1 PT2 Tj Tstg 60 60 7.
0 3.
0 5.
0 0.
5 2.
0 10 150 −55 to +150 V V V ...

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