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2SD1922

Hitachi Semiconductor
Part Number 2SD1922
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD1922 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-92MOD 2 3 ID 1. Emitter 2. Collec...
Datasheet PDF File 2SD1922 PDF File

2SD1922
2SD1922



Overview
2SD1922 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-92MOD 2 3 ID 1.
Emitter 2.
Collector 3.
Base 1 3 2 1 2SD1922 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current E to C diode forward current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ic (peak) ID PC Tj Tstg Ratings 25 25 6 0.
8 1.
5 0.
8 0.
9 150 –55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 25 25 6 — — — 250 — — Typ — — — — — — — — — — Max — 35 35 — 0.
2 0.
5 0.
2 1200 0.
3 1.
1 V V Unit V V V V µA µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I C = 0.
8 A, RBE = ∞, L = 20 mH I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = ∞ VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.
1 A*1 I C = 0.
8 A, IB = 80 mA*1 I D = 0.
8 A*1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustaining voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(BR)EBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage E to C diode forward voltage Note: 1.
Pulse test I EBO hFE VCE(sat) VD 2 2SD1922 Maximum Collector Dissipation Curve 1.
2 Collector Power Dissipation PC (W) Area of Safe Operation 10 3 1.
0 0.
3 0.
1 0.
03 Ta = 25°C 1 Shot Pulse iC(peak) IC(max) DC 1 m s Collector Current IC (A) PW 0.
8 s m n 10 = tio ra pe O 0.
4 0 50 100 150 Ambient Temperature Ta (°C) 0.
01 0.
1 0.
3 1.
0 3 10 30 100 Collector to Emitter Voltage VCE (V) Area of Safe Operation of Emitter to Collector Diode 10 1.
0 Ta = 25°C 1 Shot Pulse Collector Current IC (A) 0.
8 Typical Output Characteristics 1.
8 1.
6 1.
4 1.
2 8 Diode Current ID (A) 1.
0 6 0.
6 0.
8 0.
6 4 0.
4 0.
4 0.
2 mA IB = 0 Ta = 25° 2 0.
2 0 0.
1 0.
3 1.
0 3 Pulse Width PW (ms) 10 0 2 4 6 8 10 Collector to Emitter V...



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